An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

Exemplary semiconductor processing systems may include a substrate support defining an aperture therethrough. The processing systems may include a light assembly having a light source that emits an optical signal that is directed toward the aperture. The optical signal may have a high angle of incidence relative to the substrate support. The processing systems may include a photodetector aligned with an angle of reflectance of the optical signal.

Exemplary semiconductor processing systems may include a substrate support defining an aperture therethrough. The processing systems may include a light assembly having a light source that emits an optical signal that is directed toward the aperture. The optical signal may have a high angle of incidence relative to the substrate support. The processing systems may include a photodetector aligned with an angle of reflectance of the optical signal.

Exemplary semiconductor processing systems may include a substrate support defining an aperture therethrough. The processing systems may include a light assembly having a light source that emits an optical signal that is directed toward the aperture. The optical signal may have a high angle of incidence relative to the substrate support. The processing systems may include a photodetector aligned with an angle of reflectance of the optical signal. A controller for the processing system may be programmed to receive an amount of the optical signal received by the photodetector and determine a thickness of the outermost layer of film. The controller may include a model trained to classify based on the optical signal. The output of the model may be used to control a process performed on the substrate.

Exemplary semiconductor processing systems may include a substrate support defining an aperture therethrough. The processing systems may include a light assembly having a light source that emits an optical signal that is directed toward the aperture. The optical signal may have a high angle of incidence relative to the substrate support. The processing systems may include a photodetector aligned with an angle of reflectance of the optical signal. A controller for the processing system may be programmed to receive an amount of the optical signal received by the photodetector and determine a thickness of the outermost layer of film. The controller may include a model trained to classify based on the optical signal. The output of the model may be used to control a process performed on the substrate.

A novel polishing apparatus which determines a polishing end point of a substrate on the basis of a strain of a constituent element of the polishing apparatus caused by friction between a substrate such as a wafer and a polishing pad. The polishing apparatus includes a rotatable polishing table which supports a polishing pad, a polishing head which presses the substrate against the polishing pad, a rotating shaft connected to the polishing head, a support structure which rotatably supports the rotating shaft, a strain measuring instrument which measures a strain of the support structure, and an end point detector which determines a polishing end point of the substrate on the basis of a change in the strain. The strain measuring instrument includes at least one strain sensor fixed to the support structure.

A novel polishing apparatus which determines a polishing end point of a substrate on the basis of a strain of a constituent element of the polishing apparatus caused by friction between a substrate such as a wafer and a polishing pad. The polishing apparatus includes a rotatable polishing table which supports a polishing pad, a polishing head which presses the substrate against the polishing pad, a rotating shaft connected to the polishing head, a support structure which rotatably supports the rotating shaft, a strain measuring instrument which measures a strain of the support structure, and an end point detector which determines a polishing end point of the substrate on the basis of a change in the strain. The strain measuring instrument includes at least one strain sensor fixed to the support structure.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.

A polishing system includes a platen having a top surface to support an annular polishing pad, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure extending above the platen and to which one or more polishing system components are secured, and a support post. The platen is rotatable about an axis of rotation that passes through approximately a center of the platen. The first support post has an upper end coupled to and supporting the support structure and a lower portion that is supported on the platen or that extends through an aperture in the platen.