A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

The present application provides a grinding control method, a grinding control apparatus and a storage medium, and is applied in the field of semiconductor manufacturing processes. The method includes: acquiring a target resistance value of a metal film of a grinding object set by a user, determining a target output value of an eddy current sensor according to the target resistance value, acquiring an output value of the eddy current sensor in real time, and stopping a grinding task when the output value reaches the target output value.

The present application provides a grinding control method, a grinding control apparatus and a storage medium, and is applied in the field of semiconductor manufacturing processes. The method includes: acquiring a target resistance value of a metal film of a grinding object set by a user, determining a target output value of an eddy current sensor according to the target resistance value, acquiring an output value of the eddy current sensor in real time, and stopping a grinding task when the output value reaches the target output value.

Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head to hold a substrate and bring a lower surface of the substrate into contact with the polishing pad, and an in-situ friction monitoring system including a friction sensor. The friction sensor includes a pad portion having a substrate contacting portion with an upper surface to contact the lower surface of the substrate, and a pair of capacitive sensors positioned below and on opposing sides of the substrate contacting portion.

A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head to hold a substrate and bring a lower surface of the substrate into contact with the polishing pad, and an in-situ friction monitoring system including a friction sensor. The friction sensor includes a pad portion having a substrate contacting portion with an upper surface to contact the lower surface of the substrate, and a pair of capacitive sensors positioned below and on opposing sides of the substrate contacting portion.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

A polishing apparatus and a polishing method capable of accurately measuring a film thickness of a workpiece, such as wafer, substrate, or panel, used in manufacturing of semiconductor devices during polishing of the workpiece are disclosed. The processing system is configured to determine a film thickness of the workpiece based on relative reflectance data calculated by a calculation formula expressed as: the relative reflectance data=MD1/[BD1.Math.k], where MD1 represents first intensity measurement data indicating intensity of the reflected light from the workpiece measured by the first spectrometer, BD1 represents the first base intensity data, and k represents a rate of change in second intensity measurement data with respect to the second base intensity data. The second intensity measurement data is indicative of intensity of the light of the light source measured by the second spectrometer during polishing of the workpiece.