One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

In a double-side polishing apparatus includes at least one work thickness measuring instrument in real time during double-side polishing of the work; an inner circumferential surface defined by the through hole in said one of the upper plate and the lower plate is provided with a metal cylindrical member; and either of: a lower window provided in a lower part of the cylindrical member provided in the upper plate and an upper window provided in an upper part of the cylindrical member provided to cover the upper side of the through hole provided in the upper plate, or an upper window provided in an upper part of the cylindrical member provided in the lower plate and a lower window provided to cover the lower side of the through hole provided in the lower plate.—

In a double-side polishing apparatus includes at least one work thickness measuring instrument in real time during double-side polishing of the work; an inner circumferential surface defined by the through hole in said one of the upper plate and the lower plate is provided with a metal cylindrical member; and either of: a lower window provided in a lower part of the cylindrical member provided in the upper plate and an upper window provided in an upper part of the cylindrical member provided to cover the upper side of the through hole provided in the upper plate, or an upper window provided in an upper part of the cylindrical member provided in the lower plate and a lower window provided to cover the lower side of the through hole provided in the lower plate.—

A polishing apparatus includes a polishing unit that rotatably supports a polishing pad for polishing a wafer held on a holding surface of a chuck table and that has a spindle formed with a through-hole extending from one end of the spindle to the other end of the spindle in an axis of the spindle. A thickness measuring unit is disposed at one end of the through-hole of the spindle that measures a thickness of the wafer. A controller obtains information regarding the thickness of the wafer measured by the thickness measuring unit at a position defined by a variation in a distance between a rotational center of the rotating wafer fed by a parallel feeding mechanism, a center of the other end of the through-hole facing the wafer, and a rotational angle of the chuck table, and forms mapping data regarding the thickness of the wafer.

A polishing apparatus includes a polishing unit that rotatably supports a polishing pad for polishing a wafer held on a holding surface of a chuck table and that has a spindle formed with a through-hole extending from one end of the spindle to the other end of the spindle in an axis of the spindle. A thickness measuring unit is disposed at one end of the through-hole of the spindle that measures a thickness of the wafer. A controller obtains information regarding the thickness of the wafer measured by the thickness measuring unit at a position defined by a variation in a distance between a rotational center of the rotating wafer fed by a parallel feeding mechanism, a center of the other end of the through-hole facing the wafer, and a rotational angle of the chuck table, and forms mapping data regarding the thickness of the wafer.

The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.

The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses. The polishing-end-point detection process includes measuring a torque for rotating the polishing table (3) and determining a polishing end point based on the torque.

The sum of torques: the torque of the sun gear and the torque of the internal gear, and the ratio of the torques are controlled within predetermined ranges.