B24B37/015

CHEMICAL MECHANICAL POLISHING APPARATUS, CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
20220118582 · 2022-04-21 ·

A chemical mechanical polishing method is provided. A chemical mechanical polishing method comprising providing a polishing pad, supplying a first purging compound having a first temperature onto the polishing pad, supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound, supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad, and supplying a second slurry having a fourth temperature lower than the third temperature onto the polishing pad supplied with the second purging compound.

METHODS OF DETECTING NON-CONFORMING SUBSTRATE PROCESSING EVENTS DURING CHEMICAL MECHANICAL POLISHING

Embodiments of the present disclosure generally relate to chemical mechanical polishing systems (CMP) systems and processes used in the manufacturing of electronic devices. In particular, embodiments herein relate to methods of detecting non-conforming substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor that is positioned above the platen, monitoring the temperature of the polishing pad, and, if the change in polishing pad temperature reaches a threshold value, initiating a response using a controller of the polishing system.

METHODS OF DETECTING NON-CONFORMING SUBSTRATE PROCESSING EVENTS DURING CHEMICAL MECHANICAL POLISHING

Embodiments of the present disclosure generally relate to chemical mechanical polishing systems (CMP) systems and processes used in the manufacturing of electronic devices. In particular, embodiments herein relate to methods of detecting non-conforming substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor that is positioned above the platen, monitoring the temperature of the polishing pad, and, if the change in polishing pad temperature reaches a threshold value, initiating a response using a controller of the polishing system.

PAD-TEMPERATURE REGULATING APPARATUS, PAD-TEMPERATURE REGULATING METHOD, AND POLISHING APPARATUS
20210347004 · 2021-11-11 ·

A pad-temperature regulating device is disclosed, which can improve a responsiveness of a control for a surface temperature of a polishing pad and regulate the surface temperature of the polishing pad without causing defects, such as scratches, on the substrate. The pad-temperature regulating apparatus includes: a heat exchanger disposed above the polishing pad, whose temperature is maintained at a predetermined temperature; a pad-temperature measuring device configured to measure the surface temperature of the polishing pad; a distance sensor configured to measure a separation distance between the polishing pad and the heat exchanger; an elevating mechanism for moving the heat exchanger vertically with respect to the polishing pad; and a controller configured to control operation of the elevating mechanism based on measured values of the pad-temperature measuring device.

PAD-TEMPERATURE REGULATING APPARATUS, PAD-TEMPERATURE REGULATING METHOD, AND POLISHING APPARATUS
20210347004 · 2021-11-11 ·

A pad-temperature regulating device is disclosed, which can improve a responsiveness of a control for a surface temperature of a polishing pad and regulate the surface temperature of the polishing pad without causing defects, such as scratches, on the substrate. The pad-temperature regulating apparatus includes: a heat exchanger disposed above the polishing pad, whose temperature is maintained at a predetermined temperature; a pad-temperature measuring device configured to measure the surface temperature of the polishing pad; a distance sensor configured to measure a separation distance between the polishing pad and the heat exchanger; an elevating mechanism for moving the heat exchanger vertically with respect to the polishing pad; and a controller configured to control operation of the elevating mechanism based on measured values of the pad-temperature measuring device.

Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine
11787007 · 2023-10-17 · ·

Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine are disclosed. An example system to dispense fluid for a grinder/polisher includes: a fluid dispenser having: a fluid reservoir to store a fluid, and a nozzle configured to dispense the fluid onto a grinding/polishing surface; a temperature sensor configured to output a temperature signal indicative of a temperature of the grinding/polishing surface during a grinding or polishing operation; and a processor configured to: compare the temperature signal to a threshold; and send a dispense signal to the fluid dispenser when the temperature signal satisfies the predetermined threshold, wherein the fluid dispense is configured to dispense the fluid in response to the dispense signal.

Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine
11787007 · 2023-10-17 · ·

Methods and apparatus to control a fluid dispenser on a metallurgical specimen preparation machine are disclosed. An example system to dispense fluid for a grinder/polisher includes: a fluid dispenser having: a fluid reservoir to store a fluid, and a nozzle configured to dispense the fluid onto a grinding/polishing surface; a temperature sensor configured to output a temperature signal indicative of a temperature of the grinding/polishing surface during a grinding or polishing operation; and a processor configured to: compare the temperature signal to a threshold; and send a dispense signal to the fluid dispenser when the temperature signal satisfies the predetermined threshold, wherein the fluid dispense is configured to dispense the fluid in response to the dispense signal.

NOVEL CHEMICAL-MECHANICAL POLISHING APPARATUS
20230286106 · 2023-09-14 ·

An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

NOVEL CHEMICAL-MECHANICAL POLISHING APPARATUS
20230286106 · 2023-09-14 ·

An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

EXTERNAL HEATING SYSTEM FOR USE IN CHEMICAL MECHANICAL POLISHING SYSTEM

A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.