A polishing apparatus includes a polishing table which supports a polishing pad, a polishing head which polishes a substrate by pressing the substrate against a polishing surface of the polishing pad, a pad temperature measuring device which measures a temperature of the polishing surface, a pad temperature adjusting device which adjusts the temperature of the polishing surface, and a control device which controls the operation of the pad temperature adjusting device based on the temperature of the polishing surface measured by the pad temperature measuring device. The pad temperature adjusting device includes a pad heater which is disposed to be separated upward from the polishing surface, and the pad heater includes a longitudinal portion which extends in a substantially radial direction of the polishing pad and a slit-shaped injection port which is formed in a longitudinal direction of the longitudinal portion and injects a heating fluid toward the polishing surface.

Provided is a polishing apparatus and polishing method which can preferably adjust a temperature of a surface of a polishing pad. A polishing apparatus includes: a polishing table configured to be rotatable, and to support the polishing pad; a substrate configured to hold an object to be polished, and to press the object to be polished against the polishing pad; a polishing liquid supplying portion configured to supply a polishing liquid to a polishing surface; a polishing liquid removing portion configured to remove the polishing liquid from the polishing surface; and a temperature adjuster configured to adjust a temperature of the polishing surface. In a rotating direction of the polishing table, the polishing liquid supplying portion, a polishing region where the object to be polished is pressed against the polishing surface by the substrate, the polishing liquid removing portion, and the temperature adjuster are disposed in this order.

Provided is a polishing apparatus and polishing method which can preferably adjust a temperature of a surface of a polishing pad. A polishing apparatus includes: a polishing table configured to be rotatable, and to support the polishing pad; a substrate configured to hold an object to be polished, and to press the object to be polished against the polishing pad; a polishing liquid supplying portion configured to supply a polishing liquid to a polishing surface; a polishing liquid removing portion configured to remove the polishing liquid from the polishing surface; and a temperature adjuster configured to adjust a temperature of the polishing surface. In a rotating direction of the polishing table, the polishing liquid supplying portion, a polishing region where the object to be polished is pressed against the polishing surface by the substrate, the polishing liquid removing portion, and the temperature adjuster are disposed in this order.

An efficient ultra-precise shear thickening and chemical synergy polishing method, comprising the following steps: 1) fixing workpieces (3) to a polishing and fixing disc (31) of implementation equipment; 2) preparing an efficient ultra-precise shear thickening and chemical synergy polishing slurry, the polishing slurry comprising polishing abrasive particles or micro-powder, a shear thickening enhanced phase, water and green chemistry environmentally-friendly substances; 3) adding the prepared polishing slurry into a dust-prevention cover (30), and starting a polishing slurry circulating device, so that the polishing slurry is supplied to the surfaces of the workpieces (3) by means of polishing tools (1); and 4) starting driving devices (9) and driving mechanisms (33), so that the polishing tools (1) move relative to the workpieces (3), and surfaces of the workpieces (3) to be machined are polished. In the present invention, active constraint of the solution flow boundary as well as active control of the flow of the polishing slurry and the synergy between shear thickening and green chemistry are utilized, so that the machining efficiency and precision are improved, and the types of materials that can be machined and the surface shapes are increased.

An efficient ultra-precise shear thickening and chemical synergy polishing method, comprising the following steps: 1) fixing workpieces (3) to a polishing and fixing disc (31) of implementation equipment; 2) preparing an efficient ultra-precise shear thickening and chemical synergy polishing slurry, the polishing slurry comprising polishing abrasive particles or micro-powder, a shear thickening enhanced phase, water and green chemistry environmentally-friendly substances; 3) adding the prepared polishing slurry into a dust-prevention cover (30), and starting a polishing slurry circulating device, so that the polishing slurry is supplied to the surfaces of the workpieces (3) by means of polishing tools (1); and 4) starting driving devices (9) and driving mechanisms (33), so that the polishing tools (1) move relative to the workpieces (3), and surfaces of the workpieces (3) to be machined are polished. In the present invention, active constraint of the solution flow boundary as well as active control of the flow of the polishing slurry and the synergy between shear thickening and green chemistry are utilized, so that the machining efficiency and precision are improved, and the types of materials that can be machined and the surface shapes are increased.

A CMP polishing apparatus for flattening a quadrate substrate is provided. A polishing apparatus for polishing a quadrate substrate is provided. The polishing apparatus includes a substrate holding portion configured to hold the quadrate substrate. The substrate holding portion includes a quadrate substrate supporting surface that supports the substrate, and an attachment mechanism that attaches a retainer member to be disposed at an outside of at least one corner portion of the substrate supporting surface.

A CMP polishing apparatus for flattening a quadrate substrate is provided. A polishing apparatus for polishing a quadrate substrate is provided. The polishing apparatus includes a substrate holding portion configured to hold the quadrate substrate. The substrate holding portion includes a quadrate substrate supporting surface that supports the substrate, and an attachment mechanism that attaches a retainer member to be disposed at an outside of at least one corner portion of the substrate supporting surface.

A Chemical Mechanical Polishing, CMP, process applied to a wafer of Silicon Carbide having a thickness of, or lower than, 200 μm, comprising the steps of: arranging the wafer on a supporting head of a CMP processing apparatus, the wafer having a front side and a back side opposite to one another, the front side housing at least one electronic component and being coupled to the supporting head; deliver a polishing slurry on the wafer, wherein the polishing slurry has a pH in the range 2-3; pressing the back side of the wafer against a polishing pad of the CMP apparatus exerting, by the supporting head, a pressure on the polishing pad in the range 5-20 kPa; setting a rotation of the polishing pad in the range 30-180 rpm, and setting a rotation of polishing head in the range 30-180 rpm; setting and maintaining a CMP process temperature equal to, or below, 50° C.

A Chemical Mechanical Polishing, CMP, process applied to a wafer of Silicon Carbide having a thickness of, or lower than, 200 μm, comprising the steps of: arranging the wafer on a supporting head of a CMP processing apparatus, the wafer having a front side and a back side opposite to one another, the front side housing at least one electronic component and being coupled to the supporting head; deliver a polishing slurry on the wafer, wherein the polishing slurry has a pH in the range 2-3; pressing the back side of the wafer against a polishing pad of the CMP apparatus exerting, by the supporting head, a pressure on the polishing pad in the range 5-20 kPa; setting a rotation of the polishing pad in the range 30-180 rpm, and setting a rotation of polishing head in the range 30-180 rpm; setting and maintaining a CMP process temperature equal to, or below, 50° C.

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.