A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

An apparatus and a method forming a semiconductor structure are provided. The method includes receiving a substrate; mounting the substrate to a polishing head with a side of the substrate facing a polishing pad, the polishing pad comprising a first region and a second region; grinding the substrate against the polishing pad; and adjusting a temperature of the first region and a temperature of the second region.

An apparatus and a method forming a semiconductor structure are provided. The method includes receiving a substrate; mounting the substrate to a polishing head with a side of the substrate facing a polishing pad, the polishing pad comprising a first region and a second region; grinding the substrate against the polishing pad; and adjusting a temperature of the first region and a temperature of the second region.

There is provided an apparatus for polishing an object to be polished using a polishing pad having a polishing surface, the apparatus including a polishing table for supporting the polishing pad, the polishing table being configured to be rotatable, a substrate holding unit configured to hold the object to be polished and pressing the object to be polished against the polishing pad, and a polishing-liquid removing unit configured to remove polishing liquid from the polishing surface. The polishing-liquid removing unit includes a rinse unit configured to jet cleaning liquid onto the polishing surface and a sucking unit configured to suck the polishing liquid on the polishing surface onto which the cleaning liquid is jetted. The rinse unit includes a cleaning space surrounded by a sidewall. The sidewall includes an opening section for opening the cleaning space toward a radial direction outer side of the polishing table.

An object of the present invention is to reduce an amount of use of the polishing liquid. There is provided an apparatus for polishing an object to be polished using a polishing pad having a polishing surface, the apparatus including: a polishing table for supporting the polishing pad, the polishing table being configured to be rotatable; a substrate holding unit configured to hold the object to be polished and press the object against the polishing pad; a supplying device for supplying polishing liquid to the polishing surface in a state in which the supplying device is pressed against the polishing pad; and a pressing mechanism configured to press the supplying device against the polishing pad, in which the pressing mechanism is capable of respectively adjusting pressing forces for pressing the sidewalls of on the upstream side and the downstream side of the supplying device against the polishing surface.

A polishing apparatus capable of preventing condensation on an inner surface of a transparent window provided in a polishing pad and capable of achieving accurate measuring of a film thickness is disclosed. The polishing apparatus includes: a polishing pad having a polishing surface; a polishing head configured to press a workpiece against the polishing surface; a transparent window disposed in the polishing pad; a polishing table configured to support the polishing pad; an optical sensor head located below the transparent window and configured to direct light to the workpiece through the transparent window and receive reflected light from the workpiece through the transparent window; and a cooling device configured to cool a space between the transparent window and the optical sensor head.

A chemical mechanical polishing (CMP) system that includes a platen, a conduit having a heating segment and a delivery outlet, and a heater coupled to the heating segment of the conduit. The delivery outlet is positioned adjacent to the platen, whereas the heating segment defines a dispensing distance with the delivery outlet. The dispensing distance is associated with a stability of a CMP slurry at an elevated temperature that is above an ambient temperature.

A chemical mechanical polishing (CMP) system that includes a platen, a conduit having a heating segment and a delivery outlet, and a heater coupled to the heating segment of the conduit. The delivery outlet is positioned adjacent to the platen, whereas the heating segment defines a dispensing distance with the delivery outlet. The dispensing distance is associated with a stability of a CMP slurry at an elevated temperature that is above an ambient temperature.