An end point detection method is provided for detecting an end point based on a drive current supplied to a drive unit that rotates and drives one of a polishing table and a holding unit. The end point detection method includes: a step (S102) of determining whether a polishing condition of a polishing process to be executed coincides with a preset specific polishing condition; a step (S103) of adjusting a current control parameter in a drive control unit that controls the drive current, the current control parameter related to a change in the drive current with respect to a change in a driving load of the drive unit, if it is determined that the polishing condition coincides with the specific polishing condition; and a step (S105) of detecting the drive current supplied to the drive unit based on the adjusted current control parameter.

A polishing apparatus 100 includes a first electric motor 14 that rotationally drives a polishing table 12, and a second electric motor 22 that rotationally drives a top ring 20 that holds a semiconductor wafer 18. The polishing apparatus 100 includes: a current detection portion 24; an accumulation portion 110 that accumulates, for a prescribed interval, current values of three phases that are detected by the current detection portion 24; a difference portion 112 that determines a difference between a detected current value and the accumulated value, where the detected current value is detected in an interval that is different than the prescribed interval; and an endpoint detection portion 29 that detects a polishing endpoint that indicates the end of polishing of the surface of the semiconductor wafer 18, based on a change in the difference that the difference portion 112 outputs.

The present disclosure includes charging members for charging abrasive particles into the surface of a lapping plate. The charging members include one or more channels to permit abrasive slurry to flow through when the charging member is in contact with the lapping plate.

A method for electropolishing a manufactured metallic article, the method comprising: contacting the metallic article with an electropolishing electrolyte; and electropolishing the metallic article in the electropolishing electrolyte through the application of an applied current regime comprising: at least one electropolishing regime, each electropolishing regime comprising a current density of at least 2 A/cm.sup.2 and a voltage comprising a shaped waveform having a frequency from 2 Hz to 300 kHz, a minimum voltage of at least 0 V and a maximum voltage of between 0.5 to 500 V.

A polishing apparatus 100 includes a first electric motor 14 that rotationally drives a polishing table 12, and a second electric motor 22 that rotationally drives a top ring 20 that holds a semiconductor wafer 18. The polishing apparatus 100 includes: a current detection portion 24; an accumulation portion 110 that accumulates, for a prescribed interval, current values of three phases that are detected by the current detection portion 24; a difference portion 112 that determines a difference between a detected current value in an interval that is different to the prescribed interval and the accumulated current value; and an endpoint detection portion 29 that detects a polishing endpoint that indicates the end of polishing of the surface of the semiconductor wafer 18, based on a change in the difference that the difference portion 112 outputs.

Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, and a sensor assembly. The retaining ring is coupled to the body. The sensor assembly is positioned at least partially in the body. The sensor assembly includes a transmitter, an antenna, and a vibrational sensor. The transmitter has a first end and a second end. The antenna is coupled to the first end of the transmitter. The vibrational sensor is coupled to the second end. The vibrational sensor is configured to detect vibration during chemical mechanical processes with respect to radial, azimuthal, and angular axes of the carrier head.

A process tool including a polishing pad on a top surface of a wafer platen. A wafer carrier is configured to hold a wafer over the polishing pad. A slurry dispenser is configured to dispense an abrasive slurry including a plurality of charged abrasive particles having a first polarity onto the polishing pad. A first conductive rod is within the wafer platen and coupled to a first voltage supply. A wafer roller is configured to support the wafer. A first wafer brush is arranged beside the wafer roller. A second conductive rod is within the first wafer brush and coupled to a second voltage supply. The first voltage supply is configured to apply a first charge having a second polarity, opposite the first polarity, to the first conductive rod. The second voltage supply is configured to apply a second charge having the second polarity to the second conductive rod.

The present disclosure relates to a chemical mechanical polishing (CMP) pad, and an associated method to perform a CMP process. In some embodiments, the CMP pad comprises a polishing layer having a front surface with protruding asperities while a back surface being planar. A film electrode is attached to the back surface of the polishing layer and is isolated from the front surface of the polishing layer. The CMP pad further comprises an insulating layer covering sidewall and bottom surfaces of the film electrode

The invention discloses an electrochemical mechanical polishing/planarization equipment for processing a polishing surface of a conductive wafer substrate, which includes a power supply; a polishing table with conductivity; a polishing pad including an insulating active layer and having holes where a conductive chemical liquid is accommodated; a polishing head having conductivity and being attached to the back of the polishing surface. The power supply, the polishing table, the chemical liquid, the conductive wafer substrate, and the polishing head in sequence form a conductive loop, and an electrochemical reaction layer is formed on the polishing surface of the conductive wafer substrate. The polishing head drives the wafer substrate to move relative to the polishing pad, and to implement a mechanical polishing or a chemical mechanical polishing of the electrochemical reaction layer.

The present disclosure includes charging members for charging abrasive particles into the surface of a lapping plate. The charging members include one or more channels to permit abrasive slurry to flow through when the charging member is in contact with the lapping plate.