A photoelectric fluid field cluster catalytic method for atomic-scale deterministic processing, comprises the following steps: selecting nanoparticles with photocatalytic activity as a photocatalytic medium, and using a photoreduction method to realize the precipitation of metal nanoparticles on a surface of the photocatalytic medium, thus creating photoelectrocatalytic clusters; illuminating a coupling area between a surface to be processed of a workpiece, the photoelectrocatalytic clusters and a flexible tool with a catalytic light source, and simultaneously applying a bias voltage to a conductive tray of the workpiece; and applying a normal load to a flexible tool head and setting a rotation speed to generate a hydrodynamic pressure to drive a polishing solution to flow, thus enabling controllable removal with atomic-level precision. The disclosure utilizes the metal particles in the photoelectrocatalytic clusters to capture photogenerated electrons, thereby prolonging the lifetime of photogenerated carriers.

An electrolyte medium for electrochemical polishing of metal workpieces, which contains a plurality of solid granulate particles and a liquid electrolyte. The liquid electrolyte comprises an emulsion with a continuous phase of at least one electrically conductive hydrophilic liquid and, emulsified herein, a disperse phase of at least one hydrophobic liquid which is immiscible with the electrically conductive hydrophilic liquid and is less electrically conductive by comparison. A method provides for electrochemical polishing of metal workpieces, wherein an electrolyte medium of the aforementioned kind is added to a container and electrically conductively connected to a cathode, the metal workpiece being electrically conductively connected to an anode and being dipped into the electrolyte medium located in the container, the electrodes being acted on by an electrical voltage and the workpiece being moved relative to the plurality of solid granulate particles of the electrolyte medium.

A polishing platform of a polishing apparatus includes a platen, a polishing pad, and an electric field element disposed between the platen and the polishing pad. The polishing apparatus further includes a controller configured to apply voltages to the electric field element. A first voltage is applied to the electric field element to attract charged particles of a polishing slurry toward the polishing pad. The attracted particles reduce overall topographic variation of a polishing surface presented to a workpiece for polishing. A second voltage is applied to the electric field element to attract additional charged particles of the polishing slurry toward the polishing pad. The additional attracted particles further reduce overall topographic variation of the polishing surface presented to the workpiece. A third voltage is applied to the electric field element to repel charged particles of the polishing slurry away from the polishing pad for improved cleaning thereof.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

A slurry for electrochemical mechanical polishing of semiconductor workpieces (e.g., silicon carbide semiconductor wafers) is provided. In one example embodiment, the slurry contains a solvent an abrasive particle, and an ionic compound. The ionic compound contains a cation and an anion. One or more of the cation or the anion is bonded to the abrasive particle, for instance, with a functional group or other bonding.

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.