A polishing apparatus according to an embodiment includes a polishing table; a polishing pad provided on the polishing table; a first rotating mechanism configured to rotate the polishing table on a first rotation axis; a substrate holding unit configured to hold a substrate and press the substrate against the polishing pad; a second rotating mechanism configured to rotate the substrate holding unit on a second rotation axis; and a tilting mechanism configured to change an angle between the first rotation axis and the second rotation axis. In the apparatus, the circumferential edge of the substrate is always kept inside the circumferential edge of the polishing pad during polishing of the substrate.

A method is provided to minimize travel distance and time between correction locations on a substrate when polishing a local area of a substrate, such as a semiconductor wafer, using a location specific polishing module. A correction profile is determined and a recipe based on the correction profile is used to polish a substrate. A polishing pad assembly traverses between a first correction location and a second correction location using the combined motion of a substrate support chuck and a support arm coupled at a first end thereof to the polishing pad assembly. The chuck rotates about a center axis thereof. The positioning arm may sweep about a vertical axis disposed through a second end of the support arm. The combined motion of the chuck and the positioning arm causes the polishing pad assembly to form a spiral shaped polishing path on the substrate.

A method is provided to minimize travel distance and time between correction locations on a substrate when polishing a local area of a substrate, such as a semiconductor wafer, using a location specific polishing module. A correction profile is determined and a recipe based on the correction profile is used to polish a substrate. A polishing pad assembly traverses between a first correction location and a second correction location using the combined motion of a substrate support chuck and a support arm coupled at a first end thereof to the polishing pad assembly. The chuck rotates about a center axis thereof. The positioning arm may sweep about a vertical axis disposed through a second end of the support arm. The combined motion of the chuck and the positioning arm causes the polishing pad assembly to form a spiral shaped polishing path on the substrate.

A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each include a holder (62) for holding a workpiece (W), a drive motor (71) that rotates the holder (62), a support plate (4) holds a pad (5), a linear guide (3) that guides reciprocal movement of the support plate (4) in a direction parallel to the surface of the pad (5), and a drive cylinder (72) that advances the holder (62) or the support plate (4) in a direction that intersects the surface of the workpiece W or the pad (5) to cause the opposing surfaces of the workpiece and the pad (5) to be at least proximal to each other. A primary driver (PD) causes the support plates (4) of the planarization processing sections (SP1, SP2) to reciprocate along the same straight line in opposite phases.

A polishing system is provided, including a carrier with an offset distance. The offset distance allows a shifted carrier head to cover more surface area of the polishing surface. The offset distance effectively provides an additional rotation of the carrier head about the axis, which allows for a greater area traversed on the polishing surface, improving chemical mechanical polishing uniformity on the substrate.

A polishing apparatus which can keep a width of a polishing tool constant when a peripheral portion of a substrate is polished by the polishing tool is disclosed. The polishing apparatus includes a substrate holder 3 configured to hold a substrate W and to rotate the substrate W, and a pressing pad 50 configured to press a polishing tool 23 against a peripheral portion of the substrate W held by the substrate holder 3. The pressing pad 50 includes an elastic member 55 having a pressing surface 55a configured to press the polishing tool 23 against the peripheral portion of the substrate W and a support member 56 configured to support the elastic member 55. The support member 56 has a recess 57 formed in a front surface 56a of the support member 56, the elastic member 55 being capable of entering the recess 57.

A polishing apparatus which can keep a width of a polishing tool constant when a peripheral portion of a substrate is polished by the polishing tool is disclosed. The polishing apparatus includes a substrate holder 3 configured to hold a substrate W and to rotate the substrate W, and a pressing pad 50 configured to press a polishing tool 23 against a peripheral portion of the substrate W held by the substrate holder 3. The pressing pad 50 includes an elastic member 55 having a pressing surface 55a configured to press the polishing tool 23 against the peripheral portion of the substrate W and a support member 56 configured to support the elastic member 55. The support member 56 has a recess 57 formed in a front surface 56a of the support member 56, the elastic member 55 being capable of entering the recess 57.

A process for chemical mechanical polishing a substrate containing tungsten to at least reduce dishing of tungsten features of 100 m or less. The process includes providing a substrate containing tungsten features of 100 m or less; providing a polishing composition, containing, as initial components: water; an oxidizing agent; arginine or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and yet at least reducing dishing of the tungsten features of 100 m or less.

Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.