A method is provided and includes making a polishing table and a dummy disk rotate; bringing the dummy disk into contact with a table surface of the polishing table while a liquid is supplied to the table surface; measuring heights of the table surface at a plurality of measurement points while the dummy disk is moved on the table surface; and creating a table profile showing tilt of the table surface from measurement values of the heights of the table surface.

A method is provided and includes making a polishing table and a dummy disk rotate; bringing the dummy disk into contact with a table surface of the polishing table while a liquid is supplied to the table surface; measuring heights of the table surface at a plurality of measurement points while the dummy disk is moved on the table surface; and creating a table profile showing tilt of the table surface from measurement values of the heights of the table surface.

Disclosed are substrate polishing apparatuses, substrate polishing systems, and/or substrate polishing methods. The substrate polishing apparatus may include an electric field applying module, and a platen that rotates a polishing pad. The electric field applying module may include an inner electrode having a circular shape when viewed in plan. The platen may be on the inner electrode. A central axis of the inner electrode may be spaced apart from a central axis of the platen. The inner electrode may include a first electrode and a second electrode that may surround the first electrode and may have an annular shape.

Disclosed are substrate polishing apparatuses, substrate polishing systems, and/or substrate polishing methods. The substrate polishing apparatus may include an electric field applying module, and a platen that rotates a polishing pad. The electric field applying module may include an inner electrode having a circular shape when viewed in plan. The platen may be on the inner electrode. A central axis of the inner electrode may be spaced apart from a central axis of the platen. The inner electrode may include a first electrode and a second electrode that may surround the first electrode and may have an annular shape.

A wafer polishing system, comprising at least one polishing unit, wherein the polishing unit comprises a wafer transfer passage and at least two polishing modules; and the polishing modules are located on both sides of the wafer transfer passage. After a polishing arm of one polishing module obtains a wafer from a working position in the wafer transfer passage, the polishing process is completed; the wafer is then placed back to the wafer transfer passage along a first trajectory; a wafer transfer device moves to transfer the wafer to another working position, and after a polishing arm of the other polishing module obtains the wafer from the working position along a second trajectory, another polishing process is completed; and the first trajectory, a movement trajectory of the wafer transfer device, and the second trajectory are approximately Z-shaped.

A wafer polishing system, comprising at least one polishing unit, wherein the polishing unit comprises a wafer transfer passage and at least two polishing modules; and the polishing modules are located on both sides of the wafer transfer passage. After a polishing arm of one polishing module obtains a wafer from a working position in the wafer transfer passage, the polishing process is completed; the wafer is then placed back to the wafer transfer passage along a first trajectory; a wafer transfer device moves to transfer the wafer to another working position, and after a polishing arm of the other polishing module obtains the wafer from the working position along a second trajectory, another polishing process is completed; and the first trajectory, a movement trajectory of the wafer transfer device, and the second trajectory are approximately Z-shaped.