A method of producing a glass article includes holding a carrier having a circular shape, in which a glass substrate having a circular shape is retained, with an upper surface plate and a lower surface plate; and polishing the glass substrate by rotating the carrier with respect to the upper surface plate and the lower surface plate, to obtain the glass article. The glass substrate is disposed in the carrier such that, in a top plan view, a center of the carrier is included in a region of the glass substrate, and a center of the glass substrate is shifted from the center of the carrier.

A manufacturing method of a carrier for a double-side polishing apparatus, including: preparing a carrier base material and insert thicker than the carrier base material, inserting the insert into a holding hole so as to protrude the insert from both sides of the front surface and back surface of the carrier base material, measuring each of a front protruding amount of the insert protruded from front surface of the carrier base material and a back protruding amount of the insert protruded from back surface of the carrier base material, setting each rotational speed of the upper turn table and lower turn table in starting-up polishing of the carrier so as to decrease the difference between the front protruding amount and back protruding amount, and a starting-up polishing step to subject the carrier to starting-up polishing at each set rotational speed of the upper turn table and the lower turn table.

A manufacturing method of a carrier for a double-side polishing apparatus, including: preparing a carrier base material and insert thicker than the carrier base material, inserting the insert into a holding hole so as to protrude the insert from both sides of the front surface and back surface of the carrier base material, measuring each of a front protruding amount of the insert protruded from front surface of the carrier base material and a back protruding amount of the insert protruded from back surface of the carrier base material, setting each rotational speed of the upper turn table and lower turn table in starting-up polishing of the carrier so as to decrease the difference between the front protruding amount and back protruding amount, and a starting-up polishing step to subject the carrier to starting-up polishing at each set rotational speed of the upper turn table and the lower turn table.

A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0A+B2.0 and A/B>1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD<0 while controlling the GBIR value to be equal to or smaller than a required value.

A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0A+B2.0 and A/B>1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD<0 while controlling the GBIR value to be equal to or smaller than a required value.

Based on the relational data that indicates the relationship between inter-plate distance, which is a distance between the upper plate and the lower plate at two or more positions where distances from the center of the rotating plate are different, and the flatness of the work, the optimal value of the inter-plate distance is calculated.

A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.

A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.

A double disc surface grinding machine includes a clamp band which has a non-circular outer circumferential portion. The clamp band is attached to an outer circumferential surface of a work and is housed, under the attached state, in a storage portion which has a non-circular inner circumferential portion engageable with the outer circumferential portion of the clamp band, movably in a first direction. A rotation drive unit rotates the storage portion around a first rotation shaft extending in the first direction, to make the inner circumferential portion of the storage portion engage with the outer circumferential portion of the clamp band, thereby rotates the clamp band and the work together with the storage portion. At least one of the grinding wheels is fed onto the work so as to sandwich the work with a pair of rotating grinding wheels for grinding two main surfaces of the work.

A double-side polishing method of polishing both surfaces of a wafer by holding the wafer with a carrier including a holding hole configured to hold the wafer and a ring-shaped resin insert disposed along an internal circumference of the holding hole, the resin insert having an inner circumferential surface configured to contact a peripheral portion of the wafer, interposing the carrier between upper and lower turn tables to which polishing pads are attached, polishing both the surfaces of the wafer while maintaining planarity of the inner circumferential surface at or below 100 m and verticalness of the inner circumferential surface at or below 5. The method can inhibit the degradation of the flatness of the polished wafer, such as particularly an outer circumferential sag, due to variation in shape of the inner circumferential surface of the resin insert of a carrier.