Provided is a carrier head. The carrier head includes: a body having a ring shape, wherein a first locking part is formed on an external surface of the body; a support unit surrounding lateral and lower parts of the body to be elevatably coupled to the body, wherein a second locking part vertically facing the first locking part is formed on an internal surface of the support unit; a regulating member located in a space between the first locking part and the second locking part; a retainer ring having a ring shape and located at the external bottom of the support unit; and an elevating unit coupling the retainer ring to the support unit to enable a height to be regulated relative to the support unit.

Provided is a carrier head. The carrier head includes: a body having a ring shape, wherein a first locking part is formed on an external surface of the body; a support unit surrounding lateral and lower parts of the body to be elevatably coupled to the body, wherein a second locking part vertically facing the first locking part is formed on an internal surface of the support unit; a regulating member located in a space between the first locking part and the second locking part; a retainer ring having a ring shape and located at the external bottom of the support unit; and an elevating unit coupling the retainer ring to the support unit to enable a height to be regulated relative to the support unit.

A polishing apparatus capable of enabling a user to know a frequency and a trend of a retry operation of retrying a substrate release operation is disclosed. The polishing apparatus includes: a substrate holder configured to press a substrate against a polishing pad; a fluid ejection system configured to eject a fluid into a gap between the substrate and a flexible membrane for releasing the substrate from a substrate holding surface; an operation controller configured to instruct the fluid ejection system to perform a retry operation of ejecting the fluid again in a case where the release of the wafer has failed; and a monitoring device configured to store a historical information of the retry operation.

A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.

A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.

The present invention is a holding pad including a holding layer for holding a member to be polished, in which the holding layer includes on a part of a surface thereof a template fixing portion for sticking a template for preventing lateral displacement of the member to be polished, the template fixing portion has on a surface thereof an adsorption layer for adsorbing and fixing the template the template fixing portion, and the adsorption layer is formed of a composition which is formed by crosslinking a silicone composed of a predetermined siloxane.

The present invention is a holding pad including a holding layer for holding a member to be polished, in which the holding layer includes on a part of a surface thereof a template fixing portion for sticking a template for preventing lateral displacement of the member to be polished, the template fixing portion has on a surface thereof an adsorption layer for adsorbing and fixing the template the template fixing portion, and the adsorption layer is formed of a composition which is formed by crosslinking a silicone composed of a predetermined siloxane.

An end-point detection sensor 50 detects an end point of polishing, the end-point detection sensor 50 being arranged in a polishing table 100. The end-point detection sensor 50 has a pot core. The pot core 60 has a bottom portion 61a, a magnetic core base portion 61b and a peripheral wall base portion 61c. The end-point detection sensor 50 has an exciting coil 62, and a detection coil 63. The back surface 101b of the polishing pad 101 has a space 30 which is arranged at a portion facing the polishing table 100 and houses a magnetic core extension portion 8 and a peripheral wall extension portion 11. The magnetic core extension portion 8 and the peripheral wall extension portion 11 extending to the space 30 are located in the space 30.

An end-point detection sensor 50 detects an end point of polishing, the end-point detection sensor 50 being arranged in a polishing table 100. The end-point detection sensor 50 has a pot core. The pot core 60 has a bottom portion 61a, a magnetic core base portion 61b and a peripheral wall base portion 61c. The end-point detection sensor 50 has an exciting coil 62, and a detection coil 63. The back surface 101b of the polishing pad 101 has a space 30 which is arranged at a portion facing the polishing table 100 and houses a magnetic core extension portion 8 and a peripheral wall extension portion 11. The magnetic core extension portion 8 and the peripheral wall extension portion 11 extending to the space 30 are located in the space 30.

A method includes measuring a topography of a wafer, determining that a first portion of the wafer has a greater thickness than a specified thickness. The method further includes, after measuring the wafer, performing a Chemical Mechanical Polishing (CMP) process to a first side of the wafer, and during application of the CMP process, applying additional pressure to a region of the wafer, the region comprising an asymmetric part of the wafer, the region including at least a part of the first portion of the wafer.