B24B37/30

EDGE TRIMMING METHOD
20220184768 · 2022-06-16 ·

An edge trimming method for cutting an outer peripheral portion of a workpiece having a chamfered part on the outer peripheral portion. The method includes a cut in step of relatively moving a rotating cutting blade and a chuck table to cause the blade to cut into the outer peripheral portion, a cutting step of, after the cut in step, rotating the chuck table and causing the outer peripheral portion to be cut, to form an annular step, and a moving step of, after the cutting step, moving the blade in a direction of its axis of rotation to form another annular step adjacent to the first-mentioned annular step. The cut in, cutting, and moving steps are repeated in this order, and a stepped oblique region is formed on the outer peripheral portion, with a thickness increasing from an outermost peripheral edge toward an inner side of the workpiece.

EDGE TRIMMING METHOD
20220184768 · 2022-06-16 ·

An edge trimming method for cutting an outer peripheral portion of a workpiece having a chamfered part on the outer peripheral portion. The method includes a cut in step of relatively moving a rotating cutting blade and a chuck table to cause the blade to cut into the outer peripheral portion, a cutting step of, after the cut in step, rotating the chuck table and causing the outer peripheral portion to be cut, to form an annular step, and a moving step of, after the cutting step, moving the blade in a direction of its axis of rotation to form another annular step adjacent to the first-mentioned annular step. The cut in, cutting, and moving steps are repeated in this order, and a stepped oblique region is formed on the outer peripheral portion, with a thickness increasing from an outermost peripheral edge toward an inner side of the workpiece.

Method of using a polishing system

A method of using a polishing system includes securing a wafer to a support, wherein the wafer has a first diameter. The method further includes polishing the wafer using a first polishing pad rotating about a first axis, wherein the first polishing pad has a second diameter greater than the first diameter. The method further includes rotating the support about a second axis perpendicular to the first axis after polishing the wafer using the first polishing pad. The method further includes polishing the wafer using a second polishing pad after rotating the support, wherein the second polishing pad has a third diameter less than the first diameter. The method further includes releasing the wafer from the support following polishing the wafer using the second polishing pad.

Method, system and apparatus for uniformed surface measurement

A system and a method for uniformed surface measurement are provided, in which a sensor is provided to perform measurements on a carrier in a polishing machine, and a measuring trajectory of the sensor on the carrier is adjusted by controlling the pivoting of a sensor carrier carrying the sensor and the rotation of a rotating platform in the polishing machine in order to achieve uniformed surface measurements of the carrier and real-time constructions of the surface topography. This allows the polishing state of the carrier to be monitored in real time, thereby improving the efficiency of the polishing process. A sensing apparatus for uniformed surface measurement is also provided.

Method, system and apparatus for uniformed surface measurement

A system and a method for uniformed surface measurement are provided, in which a sensor is provided to perform measurements on a carrier in a polishing machine, and a measuring trajectory of the sensor on the carrier is adjusted by controlling the pivoting of a sensor carrier carrying the sensor and the rotation of a rotating platform in the polishing machine in order to achieve uniformed surface measurements of the carrier and real-time constructions of the surface topography. This allows the polishing state of the carrier to be monitored in real time, thereby improving the efficiency of the polishing process. A sensing apparatus for uniformed surface measurement is also provided.

POLISHING HEAD, POLISHING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER

A polishing head includes a first ring-shaped member having an opening; a plate-shaped member that closes the opening on an upper side of the first ring-shaped member; a membrane that closes the opening on a lower side of the first ring-shaped member; a back pad adhered to a lower surface of the membrane; and a second ring-shaped member located below the back pad and having an opening that holds a polishing target workpiece. A space formed by closing the opening of the first ring-shaped member by the plate-shaped member and the membrane includes: a central region; and an outer peripheral region partitioned from the central region by a partition, and an inner peripheral edge region of the second ring-shaped member is located vertically below an outer peripheral edge of the outer peripheral region. A polishing apparatus includes the polishing head, and is used in a method of manufacturing a semiconductor wafer.

Three-zone carrier head and flexible membrane
11338409 · 2022-05-24 · ·

A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.

Three-zone carrier head and flexible membrane
11338409 · 2022-05-24 · ·

A flexible membrane for a carrier head of a chemical mechanical polisher includes a main portion, an annular outer portion, and three annular flaps. The main portion has a substrate mounting surface with a radius R. The annular outer portion extends upwardly from an outer edge of the main portion and has a lower edge connected to the main portion and an upper edge. The three annular flaps include a first annular flap joined to an inner surface of the main portion at a radial position between 75% and 95% of R, a second inwardly-extending annular flap joined to the annular outer portion at a position between the lower edge and the upper edge, and a third inwardly-extending annular flap joined to the upper edge of the annular outer portion.

Method of making carrier head membrane with regions of different roughness

An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.

Method of making carrier head membrane with regions of different roughness

An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.