Provided is a back grinding adhesive sheet which can adequately protect protrusions provided to a semiconductor wafer, and with which back grinding can be adequately performed. The present invention provides a back grinding adhesive sheet for a semiconductor wafer having protrusions, the back grinding adhesive sheet comprising a non-adhesive cushion layer, and an adhesive layer provided on the cushion layer. The adhesive layer has an opening with a smaller diameter than the diameter of the semiconductor wafer, and the outer edge of the semiconductor wafer is adhered to the adhesive layer such that the protrusions on the semiconductor wafer are positioned inside the opening. The protrusions are protected by the cushion layer when the semiconductor wafer is in the state of being adhered to the adhesive layer. The adhesive sheet satisfies at least one of the following conditions (1)-(2). (1) When the cushion layer is cut out using the dumbbell from JISZ1702 and is stretched 25% at a gauge length of 40 mm and a tensile speed of 300 mm/min, the tensile stress is 2-30N/10 mm. (2) The cushion layer is formed from a thermoplastic resin that has a melt flow rate (JISK7210, 125° C./10.0 kg load) of 0.2-30 g/10 min, and a melting point of 60-110° C.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

A system for thinning a substrate includes a chuck and a first liquid supply unit. The chuck includes a base portion and a frame portion disposed on the base portion, where the substrate is configured to be placed on a carrying surface of the chuck. The first liquid supply unit extends along sidewalls the frame portion and the base portion, an outlet of the first liquid supply unit is disposed next to the carrying surface of the chuck, the first liquid supply unit delivers a first liquid from a bottom of the chuck to the outlet, and the first liquid discharges from the outlet to cover a sidewall of the substrate.

A polishing head capable of preventing contact between both side walls of an elastic membrane when a negative pressure is formed in a pressure chamber formed by the elastic membrane. The polishing head includes: a first elastic membrane configured to press the workpiece against the polishing pad; a retainer ring surrounding the first elastic membrane; a second elastic membrane configured to press the retainer ring against the polishing pad; a carrier to which the first elastic membrane is secured; and an attachment member arranged in a pressure chamber formed by the second elastic membrane and fixing the second elastic membrane to the carrier. The attachment member has a support portion extending toward the retainer ring along a side wall of the second elastic membrane.

A horizontal pre-clean (HPC) module for a chemical mechanical polishing (CMP) processing system is disclosed. The HPC module includes a chamber having a basin and a lid which collectively define a processing area. The module includes a rotatable vacuum table disposed in the processing area, the rotatable vacuum table including an array of channels defined in a supporting surface thereof. The module includes a pad conditioning station disposed proximate to the rotatable vacuum table. The module includes a pad carrier positioning arm coupled to a pad carrier assembly. The module includes an actuator coupled to the pad carrier positioning arm and configured to position the pad carrier assembly between a first position over the rotatable vacuum table and a second position over the pad conditioning station.

A horizontal pre-clean (HPC) module for a chemical mechanical polishing (CMP) processing system is disclosed. The HPC module includes a chamber having a basin and a lid which collectively define a processing area. The module includes a rotatable vacuum table disposed in the processing area, the rotatable vacuum table including an array of channels defined in a supporting surface thereof. The module includes a pad conditioning station disposed proximate to the rotatable vacuum table. The module includes a pad carrier positioning arm coupled to a pad carrier assembly. The module includes an actuator coupled to the pad carrier positioning arm and configured to position the pad carrier assembly between a first position over the rotatable vacuum table and a second position over the pad conditioning station.

Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

A large area quartz crystal wafer lapping device, provided with a base, a supporting arm assembly, a lapping plate, a swivel gantry, a rotating motor, a loading block and a plate-Adjusting ring; The supporting arm assembly comprises a swing arm, a swing arm shaft, a swing arm motor, an adjustable arm and a roller; The swivel gantry is driven to rotate by the rotating motor; The loading block is encased in the plate-Adjusting ring, and a quartz crystal wafer is bonded to the bottom surface of the loading block. In the invention, through the improved design of material removal and wafer retention, the processing surface shape of large area quartz crystal wafer can meet the design requirements.

An example grinder/polisher system includes: a specimen holder configured to secure a specimen; a platen; an actuator configured to move at least one of the specimen holder and the platen; a sensor configured to detect objects within a field of view of the sensor; and a controller configured to control movement of the actuator and to stop the actuator in response to detection of an object by the sensor while the actuator is moving.