A carrier head for chemical mechanical polishing includes a housing for attachment to a drive shaft, a membrane assembly beneath the housing with a space between the housing and the membrane assembly defining a pressurizable chamber, and a sensor in the housing configured to measure a distance from the sensor to the membrane assembly.

A semiconductor manufacturing device includes: a turntable configured to be rotatable and having a first surface; a polishing pad provided on the first surface; a first support portion configured to rotatably hold the turntable; a top ring having a second surface and including a suction mechanism that holds an object to be processed on the second surface; a second support portion configured to rotatably hold the top ring; a first member to come into contact with the turntable or top ring; a second member to come into contact with the polishing pad or suction mechanism and with the turntable or top ring via the first member; and a first AE sensor to come into contact with the second member.

A method of manufacturing a wafer holder, the wafer holder having a frame having at least one cavity capable of receiving and supporting a wafer grown from an ingot to be polished in a polishing machine, the at least one cavity having a cross sectional footprint at least equal to a cross sectional footprint of the wafer, the wafer having a thickness to cross sectional area ratio of 0.001 per unit length or less, a polymer film pad being permanently affixed in the at least one cavity, including cutting a frame from a layer of a thermoset or thermoplastic material having a thickness tolerance and measuring a thickness of the frame at at least one location thereon. The method further includes forming a cavity in the frame having a predetermined depth, and permanently affixing a polymer film pad in the cavity.

A method of manufacturing a wafer holder, the wafer holder having a frame having at least one cavity capable of receiving and supporting a wafer grown from an ingot to be polished in a polishing machine, the at least one cavity having a cross sectional footprint at least equal to a cross sectional footprint of the wafer, the wafer having a thickness to cross sectional area ratio of 0.001 per unit length or less, a polymer film pad being permanently affixed in the at least one cavity, including cutting a frame from a layer of a thermoset or thermoplastic material having a thickness tolerance and measuring a thickness of the frame at at least one location thereon. The method further includes forming a cavity in the frame having a predetermined depth, and permanently affixing a polymer film pad in the cavity.

There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

A substrate holding apparatus which can adjust polishing profile precisely is disclosed. The substrate holding apparatus includes an elastic membrane that forms a plurality of pressure chambers for pressing a substrate, and a head body to which the elastic membrane is coupled. The elastic membrane includes a contact portion to be brought into contact with the substrate for pressing the substrate against a polishing pad, an edge circumferential wall extending upwardly from a peripheral edge of the contact portion, and a plurality of inner circumferential walls arranged radially inwardly of the edge circumferential wall and extending upwardly from the contact portion. At least two adjacent inner circumferential walls of the plurality of inner circumferential walls include slope circumferential walls inclined radially inwardly. The slope circumferential walls are inclined radially inwardly in their entirety from their lower ends to upper ends, and extend upwardly.

A substrate holding apparatus which can adjust polishing profile precisely is disclosed. The substrate holding apparatus includes an elastic membrane that forms a plurality of pressure chambers for pressing a substrate, and a head body to which the elastic membrane is coupled. The elastic membrane includes a contact portion to be brought into contact with the substrate for pressing the substrate against a polishing pad, an edge circumferential wall extending upwardly from a peripheral edge of the contact portion, and a plurality of inner circumferential walls arranged radially inwardly of the edge circumferential wall and extending upwardly from the contact portion. At least two adjacent inner circumferential walls of the plurality of inner circumferential walls include slope circumferential walls inclined radially inwardly. The slope circumferential walls are inclined radially inwardly in their entirety from their lower ends to upper ends, and extend upwardly.

A polishing apparatus for polishing a workpiece includes a chuck table having a holding surface for holding the workpiece placed on the holding surface under suction thereon, a polishing unit for polishing the workpiece held on the chuck table with a polishing pad while supplying a slurry to the workpiece, and a high-pressure steam ejecting unit having a nozzle for ejecting high-pressure steam to the holding surface of the chuck table. The high-pressure steam ejecting unit ejects high-pressure steam to swarf produced from polishing the workpiece and deposited on an outer circumferential portion of the holding surface for thereby removing the swarf from the holding surface.

A polishing apparatus for polishing a workpiece includes a chuck table having a holding surface for holding the workpiece placed on the holding surface under suction thereon, a polishing unit for polishing the workpiece held on the chuck table with a polishing pad while supplying a slurry to the workpiece, and a high-pressure steam ejecting unit having a nozzle for ejecting high-pressure steam to the holding surface of the chuck table. The high-pressure steam ejecting unit ejects high-pressure steam to swarf produced from polishing the workpiece and deposited on an outer circumferential portion of the holding surface for thereby removing the swarf from the holding surface.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.