An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.

Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.

One object is to suppress a substrate from being dried in the course of releasing the substrate from a substrate holding member in an apparatus for polishing. There is provided the apparatus for polishing, comprising: a polishing table configured to support a polishing pad; a substrate holding member having a substrate holding surface and a pressure chamber, which are made of an elastic membrane, wherein the pressure chamber has a plurality of areas arranged concentrically and a substrate is pressed against the polishing pad by a pressure in the pressure chamber; a pressure regulator configured to regulate a pressure of a gas that is supplied to the pressure chamber of the substrate holding member; one or a plurality of release nozzles configured to inject a pressurized fluid; and a control device configured to perform a substrate release process of releasing the substrate from the elastic membrane, the substrate release process controlling the pressure regulator to pressurize entirety of the elastic membrane by pressurizing all the areas in the pressure chamber and subsequently pressurize a center portion of the elastic membrane by pressurizing the pressure chamber such as to make a pressure in one or multiple areas on a center side, which include an area at a center of the pressure chamber, higher than pressures in other areas, wherein meanwhile the substrate release process controls the one or plurality of release nozzles to inject the pressurized fluid to a contact location between the elastic membrane and the substrate.

One object is to suppress a substrate from being dried in the course of releasing the substrate from a substrate holding member in an apparatus for polishing. There is provided the apparatus for polishing, comprising: a polishing table configured to support a polishing pad; a substrate holding member having a substrate holding surface and a pressure chamber, which are made of an elastic membrane, wherein the pressure chamber has a plurality of areas arranged concentrically and a substrate is pressed against the polishing pad by a pressure in the pressure chamber; a pressure regulator configured to regulate a pressure of a gas that is supplied to the pressure chamber of the substrate holding member; one or a plurality of release nozzles configured to inject a pressurized fluid; and a control device configured to perform a substrate release process of releasing the substrate from the elastic membrane, the substrate release process controlling the pressure regulator to pressurize entirety of the elastic membrane by pressurizing all the areas in the pressure chamber and subsequently pressurize a center portion of the elastic membrane by pressurizing the pressure chamber such as to make a pressure in one or multiple areas on a center side, which include an area at a center of the pressure chamber, higher than pressures in other areas, wherein meanwhile the substrate release process controls the one or plurality of release nozzles to inject the pressurized fluid to a contact location between the elastic membrane and the substrate.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

Some embodiments relate to a carrier head. The carrier head includes a housing configured to enclose a wafer, wherein the housing includes a retaining ring recess configured to circumferentially surround the wafer. A retaining ring, which includes a first ring-shaped layer and a second ring-shaped layer, is disposed in the retaining ring recess. The second ring-shaped layer is disposed deeper in the retaining ring recess than the first ring-shaped layer and separates the first ring-shaped layer from a bottom of the retaining ring recess. A hardness of the second ring-shaped layer is less than a hardness of the first ring-shaped layer.

Some embodiments relate to a carrier head. The carrier head includes a housing configured to enclose a wafer, wherein the housing includes a retaining ring recess configured to circumferentially surround the wafer. A retaining ring, which includes a first ring-shaped layer and a second ring-shaped layer, is disposed in the retaining ring recess. The second ring-shaped layer is disposed deeper in the retaining ring recess than the first ring-shaped layer and separates the first ring-shaped layer from a bottom of the retaining ring recess. A hardness of the second ring-shaped layer is less than a hardness of the first ring-shaped layer.

The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).