A chuck table is provided and a substrate processing system including the same. The chuck table includes a base disk having a first vacuum hole, and a chuck disk disposed on the first vacuum hole. The chuck disk includes a plurality of first sectors and a first connection member connecting the first sectors to each other.

A buffing module for buffing a substrate is provided. The buffing module comprises a buff table for supporting the substrate, the buff table being rotatable; and a buff head to which a buff pad is attached, being rotatable and movable in a direction of approaching the buff table and a direction of moving away from the buff table. The buff pad includes a first part and a second part arranged so as to surround the first part on an outer side of the first part, the first part and the second part have different characteristics from each other.

One aspect of embodiment provides a wafer polishing chamber, including a wafer transfer part; a polishing part provided with an upper surface plate and lower surface plate, and configured to polish the wafer transferred from the wafer transfer part; a partition wall configured to separate positions where the transfer part and the polishing part are disposed; a plurality of fan units configured to introduce air; and a plurality of exhaust units configured to exhaust air, wherein the fan unit may be provided in at least one in an upper portion of the polishing part.

There is provided a processing method of grinding a workpiece. The processing method includes a holding step of holding the workpiece on a side of its front surface on a chuck table, a coarse grinding step of grinding the workpiece on a side of its back surface with first grinding stones until the workpiece has a predetermined thickness, an auxiliary grinding step of grinding the workpiece on the side of its back surface with the first grinding stones such that an unground region remains at an outer peripheral portion of the workpiece, an unground region grinding step of grinding the unground region with second grinding stones having an average abrasive grain size smaller than that of the first grinding stones, and a finish grinding step of grinding the workpiece on the side of its back surface with the second grinding stones until the workpiece has a predetermined finish thickness.

An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

An apparatus for performing chemical mechanical planarization is disclosed. The apparatus includes a support, wherein an axis of rotation extends through the support. The apparatus includes at least one elongated member including a first portion and a second portion opposed to the first portion. The first portion is configured to rotatably connect to the support and pivot the elongated member about the axis of rotation relative to the support through an angle of rotation that is at least about 270 degrees in a single direction. The apparatus includes a carrier head configured to connect to the second portion and to hold and process a substrate.

Various examples of a substrate cleaning apparatus and a substrate processing apparatus are described in the present disclosure. One example of the present invention is a substrate cleaning apparatus including a roll cleaning member cleaning a substrate, an inclination sensor detecting an inclination of the roll cleaning member, and an output device outputting a detection result of the inclination sensor.

A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

The present invention provides a wafer centering device for a measurement apparatus, the device comprising: a body unit; a guide unit which is installed in the body unit, has a support part for supporting a wafer, and has a through-hole and; and a displacement unit which is formed to be moved in the through-hole and has a pusher for moving the wafer on the support part.

A substrate treatment method performed by a substrate treatment device includes placing a substrate on a stage, treating the substrate placed on the stage; and detaching a treated substrate from a stage. Detaching the treated substrate includes pushing the substrate with a lift pin in a direction away from the stage, and ejecting fluid through a fluid ejection unit onto the substrate in a direction away from the stage.