A carrier plate positioning device includes a lower plate and at least two upper plates that are provided on a machine body of the polishing machine, each upper plate being mounted with one carrier plate, a center positioning assembly and a plurality of outer positioning assemblies are provided on the machine body, when the plurality of carrier plates provided with workpieces to be polished are placed on the lower plate, the center positioning assembly is placed on an array center of the plurality of carrier plates from top to bottom, then each outer positioning assembly positions a corresponding carrier plate between the outer positioning assembly and the center positioning assembly inwardly from an outer side of the lower plate, and then each carrier plate is engaged with the corresponding upper plate by moving the upper plate downwards.

A method for forming a holder surface of a chuck table by rotating a spindle, to which an annular grinding stone is attached, and grinding an upper surface of the chuck table with the grinding stone rotated along with the spindle. The chuck table includes a porous member and a frame having a dense body in an annular shape. The method includes a first grinding process including tilting an axis of the chuck table with respect to an axis of the spindle relatively at a predetermined first angle and grinding an entire upper surface of the frame with the grinding stone, and a second grinding process including tilting the axis of the chuck table with respect to the axis of the spindle relatively at a second angle, which is smaller than the first angle, and grinding an entire upper surface of the porous member with the grinding stone.

Stored is a height of a grinding mechanism when lower surfaces of grinding stones have come into contact with an upper surface of a wafer held on a holding surface, through lowering of the grinding mechanism from above the wafer. Based on this height, an origin point height which is a height of the grinding mechanism when the lower surfaces of the grinding stones have come into contact with the holding surface is then determined.

A grinding processing system is capable of firmly fixing a main body portion of a glass plate, and is capable of performing grinding processing on a peripheral edge of the main body portion while preventing sideslip (lateral deviation) of the main body portion of the glass plate in a case where the peripheral edge of the main body portion of the glass plate is ground by biting in of a side surface (cylindrical portion) of a rotating disk-shaped grinding stone of a grinding device.

Disclosed is a wafer grinding apparatus and a method for placing and retrieving multiple wafers. The wafer grinding apparatus has several wafer turntables, a driving device, a grinding device, a front table, a rear table, a transfer device, and a control unit. Each wafer turntable features several positioning holes for locating wafers and forms an identification mark for distinguishing and identifying each wafer turntable, a first positioning mark for identifying the placement center of the positioning holes, and a hole position mark for identifying each positioning hole. The wafer grinding apparatus is capable of transferring multiple wafers simultaneously and binding the corresponding identification mark and hole position mark of each wafer to form grinding records that facilitates tracking the processing history of each wafer.

A novel technology is proposed for a technology of configuring a laminated body in which a workpiece is laminated on a supporting substrate and then thinning the workpiece. A workpiece processing method includes an adhesive material supply step of laying an adhesive material on a supporting substrate, a facing step of causing a workpiece to face the adhesive material, a laminated body forming step of pressing the adhesive material with the workpiece to integrate the workpiece and the supporting substrate together and form a laminated body, a supporting substrate grinding step of grinding and planarizing an exposed surface of the supporting substrate of the laminated body, and a thinning step of, after the supporting substrate grinding step, thinning the workpiece to a predetermined thickness by grinding an exposed surface of the workpiece of the laminated body.

An apparatus and a related method for carrying out working on the perimeter of a sheet having a first lateral surface an opposing second lateral surface and a perimeter edge, comprising multi-tool working heads and sliding constraint members that can be selectively activated to stabilize the working.

A production apparatus includes: a rotating body configured to rotate a grindstone to cut a first surface of an object; a holding unit configured to contact a second surface of the object; and a displacement unit configured to displace at least a portion of the second surface of the object in a rotation axis direction of the rotating body.

A system and method for polishing screens on electronic products can include a turntable for receiving at least one electronic product, an air source for coupling and providing air or a non-liquid fluid to a port of the electronic product, and an interface serving as a port for the air source. The air source in such embodiments provides a positive pressure environment to an internal area or volume of the one or more electronic products during a polishing function.

A wafer processing method includes forming a ring-shaped modified layer by holding a second wafer of a bonded wafer on a holding table and applying a laser beam with a focal point of the laser beam positioned on an inner side adjacent to a chamfered portion formed at an outer periphery of a first wafer of the bonded wafer; loading the bonded wafer onto a grinding apparatus for grinding the first wafer of the bonded wafer; and grinding the first wafer to thin the first wafer and remove the chamfered portion formed at the outer periphery of the first wafer by a grinding force. The loading or the grinding includes supplying a fluid for weakening a bonding force to an interface of the chamfered portion at which the first wafer and the second wafer are bonded.