A substrate polishing device includes a height detection unit configured to measure a surface height of a polishing member, and a cutting rate calculation unit configured to calculate a cutting rate of the polishing member based on the surface height. The cutting rate calculation unit corrects the current cutting rate based on the cutting rate calculated in the past when the calculated current cutting rate falls outside a search range.

A grinding stroke control device for a valve stem grinding apparatus is fixed to a processing machine and provided for gripping a valve stem or a test bar. Using the hand wheel, the dial gauge and the positioning seat can obtain an initial position, then moving the measuring meter of the positioning mechanism along the transverse direction to make sure the valve stem has the right length with a standard valve clearance. By such arrangements, the grinding stroke control device for a stem valve grinding apparatus of the invention can have a less complicated structure and therefore is more convenient to operate.

A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.

A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.

The present invention relates to a technique of calculating a responsiveness of a polishing rate to change in a pressure to press a workpiece, such as a wafer, a substrate, or a panel, for use in manufacturing of semiconductor devices, against a polishing pad. A method includes: performing simulation to calculate a pressing-pressure responsiveness profile indicating a distribution of pressing pressure, which is to be applied from the workpiece to a polishing pad (2), changed in response to a change in unit pressure in the pressure chamber of a polishing head (7); pressing the workpiece against the polishing pad to polish the workpiece, while a predetermined pressure is maintained in the pressure chamber; creating a polishing-rate profile indicating a distribution of polishing rate of the polished workpiece; and creating the polishing-rate responsiveness profile based on the pressing-pressure responsiveness profile, the predetermined pressure, and the polishing-rate profile.

The present invention relates to a technique of calculating a responsiveness of a polishing rate to change in a pressure to press a workpiece, such as a wafer, a substrate, or a panel, for use in manufacturing of semiconductor devices, against a polishing pad. A method includes: performing simulation to calculate a pressing-pressure responsiveness profile indicating a distribution of pressing pressure, which is to be applied from the workpiece to a polishing pad (2), changed in response to a change in unit pressure in the pressure chamber of a polishing head (7); pressing the workpiece against the polishing pad to polish the workpiece, while a predetermined pressure is maintained in the pressure chamber; creating a polishing-rate profile indicating a distribution of polishing rate of the polished workpiece; and creating the polishing-rate responsiveness profile based on the pressing-pressure responsiveness profile, the predetermined pressure, and the polishing-rate profile.

A method of grinding a pair of matching rolls in which the position of a grinding wheel relative to the rolls is computer controlled, and the surface profile of a roll is continuously measured and input to the computer comprising modifying the desired profile of the second roll of the matched pair adjusted by the residual shape error profile of the first roll to establish a uniform gap between the pair of rolls; and grinding the second roll to bring the profile of the second roll within acceptable tolerance based on the modified desirable profile.

A multi-angle two-dimensional ultrasonic vibration assisted nanofluid micro-lubrication grinding device includes a workpiece fixture for clamping a workpiece and a grinding wheel for grinding the workpiece, the fixture being connected with a two-dimensional ultrasonic vibration device to maintain the sharpness of the grinding wheel cutting edge and cool the grinding temperature on the workpiece surface; a jetting mechanism used for jetting nanofluid to the workpiece is arranged on one side of the grinding wheel so as to form two-dimensional ultrasonic vibration and nanofluid micro-lubrication grinding coupling; the device applies the variable-angle two-dimensional ultrasonic vibration technology to grinding processing, and adjusts the angles of two ultrasonic vibrators to generate different combined vibration directions to change the relative movement trajectories of abrasive particles and a workpiece. A grinding force and grinding temperature are detected in real time by force measurement and temperature measurement devices, meanwhile cooperation with nanofluid micro-lubrication is utilized.

A multi-angle two-dimensional ultrasonic vibration assisted nanofluid micro-lubrication grinding device includes a workpiece fixture for clamping a workpiece and a grinding wheel for grinding the workpiece, the fixture being connected with a two-dimensional ultrasonic vibration device to maintain the sharpness of the grinding wheel cutting edge and cool the grinding temperature on the workpiece surface; a jetting mechanism used for jetting nanofluid to the workpiece is arranged on one side of the grinding wheel so as to form two-dimensional ultrasonic vibration and nanofluid micro-lubrication grinding coupling; the device applies the variable-angle two-dimensional ultrasonic vibration technology to grinding processing, and adjusts the angles of two ultrasonic vibrators to generate different combined vibration directions to change the relative movement trajectories of abrasive particles and a workpiece. A grinding force and grinding temperature are detected in real time by force measurement and temperature measurement devices, meanwhile cooperation with nanofluid micro-lubrication is utilized.

A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.