An example method includes obtaining data indicative of a workpiece processing parameter. In some implementations, the example method includes determining a grinding depth for a semiconductor workpiece based at least in part on the data indicative of the workpiece processing parameter. In some implementations, the example method includes performing a grinding operation to remove material from the semiconductor workpiece to reduce a thickness of the semiconductor workpiece by the grinding depth.

A computer device is provided. The computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to store, in the at least one memory device, a model for predicting post-grinding thickness of a wafer; receive scan data of a first inspection of a wafer; execute the model using the scan data as inputs to determine a final thickness of the wafer; compare the final thickness to one or more thresholds; determine if the final thickness exceeds at least one of the one or more thresholds; and cause a grinding station to be adjusted when it is determined that the final thickness exceeds at least one of the one or more thresholds.