A polishing method capable of accurately measuring a film thickness of a substrate, such as a wafer, by enhancing light intensity of a flash-light source, such as a xenon flash lamp is disclosed. The polishing method includes: while an optical sensor head is moving across a substrate, causing a flash-light source to emit light plural times in a first exposure time of a light detector to direct the light to the substrate via the optical sensor head, capturing reflected light from the substrate by the light detector via the optical sensor head, further causing the flash-light source to emit light plural times in a second exposure time of the light detector to direct the light to the substrate via the optical sensor head, and capturing reflected light from the substrate by the light detector via the optical sensor head; generating a spectrum of the reflected light; and detecting a surface state of the substrate from the spectrum.

A CMP polishing apparatus for flattening a quadrate substrate is provided. A polishing apparatus for polishing a quadrate substrate is provided. The polishing apparatus includes a substrate holding portion configured to hold the quadrate substrate. The substrate holding portion includes a quadrate substrate supporting surface that supports the substrate, and an attachment mechanism that attaches a retainer member to be disposed at an outside of at least one corner portion of the substrate supporting surface.

A workpiece fixing device for fixing a workpiece by vacuum for machining thereof includes a support device on which the workpiece can be laid for fixing, and at least one vacuum chamber which is formed starting from the support device. The workpiece fixing device has a first fixing region and a second fixing region different from the first fixing region. The support device has a first support channel profile in the first fixing region and a second support channel profile different from the first support channel profile in the second fixing region.

A workpiece fixing device for fixing a workpiece by vacuum for machining thereof includes a support device on which the workpiece can be laid for fixing, and at least one vacuum chamber which is formed starting from the support device. The workpiece fixing device has a first fixing region and a second fixing region different from the first fixing region. The support device has a first support channel profile in the first fixing region and a second support channel profile different from the first support channel profile in the second fixing region.

A workpiece centering gauge for a grinding machine includes a link having a first pivot configured to couple with the grinding machine; a first encoder that measures an angle of the link at the first pivot; a second pivot included with the link; a measuring fork configured to releasably contact an outer surface of an elongated workpiece; a surface feeler, having a transducer, included with the measuring fork that measures a workpiece diameter a second encoder that measures an angular position of the link relative to the measuring fork; the angular position measured by the first encoder, the angular position measured by the second encoder, and a measured workpiece diameter are used to determine a deviation of the elongated workpiece from a centerline.

To terminate polishing at an appropriate position, an end point position of the polishing is sensed. According to one embodiment, a method that chemomechanically polishes a substrate including a functional chip is provided. The method includes: a step of disposing the functional chip on the substrate; a step of disposing an end point sensing element on the substrate; a step of sealing the substrate on which the functional chip and the end point sensing element are disposed with an insulating material; a step of polishing the insulating material; and a step of sensing an end point of the polishing based on the end point sensing element while the insulating material is polished.

An assistance apparatus includes a status information acquiring section that acquires a grinding condition as a status information, the grinding condition including set states associated with a plurality of movement command data, an evaluation result acquiring section that acquires evaluation results of a plurality of evaluation objects that are obtained under the grinding condition, a reward calculating section that calculates a reward for the status information based on the evaluation results, a policy storing section that stores a policy which is obtained from a value function, an action determining section that determines the movement command data to be adjusted and an adjustment amount at which said movement command data is adjusted, from among candidates of the plurality of movement command data that are adjustable, based on the status information and the policy, and an action information outputting section that is configured to output determined contents including an action information.

An assistance apparatus includes a status information acquiring section that acquires a grinding condition as a status information, the grinding condition including set states associated with a plurality of movement command data, an evaluation result acquiring section that acquires evaluation results of a plurality of evaluation objects that are obtained under the grinding condition, a reward calculating section that calculates a reward for the status information based on the evaluation results, a policy storing section that stores a policy which is obtained from a value function, an action determining section that determines the movement command data to be adjusted and an adjustment amount at which said movement command data is adjusted, from among candidates of the plurality of movement command data that are adjustable, based on the status information and the policy, and an action information outputting section that is configured to output determined contents including an action information.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.