A grinding machine and a method for measuring and producing a target outer contour is disclosed, particularly for a pin-bearing journal of a crankshaft. First, a measurement device acquires measurement values for the dimensions and shape of a workpiece in at least two measurement planes that are spaced apart and extend transversely to a longitudinal extension of a workpiece region. The measurement planes are produced by a relative movement of the workpiece region and the measurement device in a Z axis direction, relative to the movement of a grinding disc in the direction of the Z-axis thereof. These measurement values are transmitted to a CNC system for advancing a grinding disc, such that any deviations from the target contour that may be present are corrected, and the target contour of the workpiece region in question is ground adaptively on the basis of the measurement values.

Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface side, a chamfered surface on the back surface side, and an end face at a peripheral end, including: mirror-polishing of each portion of the chamfered surface on the front surface side, the chamfered surface on the back surface side, the end face, and an outermost peripheral-portion on the front or back surface adjacent to the chamfered surface; wherein the end face mirror-polishing and mirror-polishing of the outermost peripheral-portion on the front or back surface are performed in one step, after step of mirror-polishing the chamfered surface on the front surface side and step of mirror-polishing the chamfered surface on the back surface side; roll-off amount of the outermost peripheral-portion on the front or back surface is adjusted by one step-performed mirror-polishing of the end face and outermost peripheral-portion.

Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface side, a chamfered surface on the back surface side, and an end face at a peripheral end, including: mirror-polishing of each portion of the chamfered surface on the front surface side, the chamfered surface on the back surface side, the end face, and an outermost peripheral-portion on the front or back surface adjacent to the chamfered surface; wherein the end face mirror-polishing and mirror-polishing of the outermost peripheral-portion on the front or back surface are performed in one step, after step of mirror-polishing the chamfered surface on the front surface side and step of mirror-polishing the chamfered surface on the back surface side; roll-off amount of the outermost peripheral-portion on the front or back surface is adjusted by one step-performed mirror-polishing of the end face and outermost peripheral-portion.

An eyeglass lens processing apparatus includes: a processing tool configured to process a periphery of a lens; a movement portion configured to change a relative position between the lens and the processing tool; a positional data acquiring portion configured to acquire positional data related to a corner portion of an edge of the lens before the lens is finished and after the lens is roughed; a processing control data acquiring portion configured to acquire corner portion processing control data for removing a chip adhering to the lens through roughing, based on the positional data acquired by the positional data acquiring portion; and a processing control portion configured to control the movement portion based on the corner portion processing control data so as to remove the chip adhering to the lens.

A polishing apparatus includes a first substrate holder capable of holding a substrate coated with a film. The apparatus also includes a first pad holder capable of holding a first pad. The apparatus further includes a first driver configured to translate the first pad on a surface of the film so as to cause the first pad to polish the film.

A polishing apparatus includes a first substrate holder capable of holding a substrate coated with a film. The apparatus also includes a first pad holder capable of holding a first pad. The apparatus further includes a first driver configured to translate the first pad on a surface of the film so as to cause the first pad to polish the film.

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

A conditioning method which can efficiently produce surface roughness of a polishing pad to obtain an optimum polishing rate by performing dressing while monitoring the surface roughness of the polishing pad and adjusting a temperature of the polishing pad is disclosed. The conditioning method includes measuring surface roughness of the polishing pad during dressing of the polishing pad, comparing the measured surface roughness with preset target surface roughness to obtain comparison result, and adjusting a surface temperature of the polishing pad by heating or cooling the polishing pad based on the comparison result. The surface roughness is represented by at least one of five indexes comprising arithmetical mean deviation of the roughness profile (Ra), root mean square deviation of the roughness profile (Rq), maximum profile valley depth of the roughness profile (Rv), maximum profile peak height of the roughness profile (Rp), and maximum height of the roughness profile (Rz).

A conditioning method which can efficiently produce surface roughness of a polishing pad to obtain an optimum polishing rate by performing dressing while monitoring the surface roughness of the polishing pad and adjusting a temperature of the polishing pad is disclosed. The conditioning method includes measuring surface roughness of the polishing pad during dressing of the polishing pad, comparing the measured surface roughness with preset target surface roughness to obtain comparison result, and adjusting a surface temperature of the polishing pad by heating or cooling the polishing pad based on the comparison result. The surface roughness is represented by at least one of five indexes comprising arithmetical mean deviation of the roughness profile (Ra), root mean square deviation of the roughness profile (Rq), maximum profile valley depth of the roughness profile (Rv), maximum profile peak height of the roughness profile (Rp), and maximum height of the roughness profile (Rz).

A cutting apparatus includes a width measuring unit for measuring the width of a grooving groove formed in a wafer by laser grooving and the width of a cut groove formed by a cutting blade. The width measuring unit includes an imaging camera for imaging the grooving groove and the cut groove, and an illuminating unit for illuminating an area to be imaged by the imaging camera with light supplied in a predetermined light quantity. Therefore, when first light is radiated from the illuminating unit, a first image in which the grooving groove is sharply imaged can be imaged by the imaging camera, whereas when second light is radiated from the illuminating unit, a second image in which the cut groove is clearly imaged can be imaged by the imaging camera. Consequently, the grooving groove and the cut groove can be easily distinguished from each other.