A method and apparatus for on-line measurement of the wafer thinning and grinding force, related to the field of ultra-precision machining of semiconductor wafer materials. The grinding force measuring apparatus comprises a semiconductor wafer, a worktable, a bearing table, a thin film pressure sensor, and a data processing and wireless transmission module. The grinding force measuring method includes sensor calibration based on the testing device and on-line measurement of grinding force. Using the grinding force measuring device and method provided by the invention, the grinding force in the semiconductor wafer grinding process can be monitored in real time, which is of great significance for semiconductor processing and reducing grinding damage. The invention also has the following characteristics: the sensor adopts a film pressure sensor, the response time is short, and the test precision is high; the data transmission adopts a wireless transmission design, thus the grinding force can be monitored in real time during the wafer and spindle rotation process and the risk of winding during wafer rotation can be avoided. The sensor adopts a distributed design, which can monitor the distribution of the grinding force along the wafer radial direction or crystal orientation.

A method and apparatus for on-line measurement of the wafer thinning and grinding force, related to the field of ultra-precision machining of semiconductor wafer materials. The grinding force measuring apparatus comprises a semiconductor wafer, a worktable, a bearing table, a thin film pressure sensor, and a data processing and wireless transmission module. The grinding force measuring method includes sensor calibration based on the testing device and on-line measurement of grinding force. Using the grinding force measuring device and method provided by the invention, the grinding force in the semiconductor wafer grinding process can be monitored in real time, which is of great significance for semiconductor processing and reducing grinding damage. The invention also has the following characteristics: the sensor adopts a film pressure sensor, the response time is short, and the test precision is high; the data transmission adopts a wireless transmission design, thus the grinding force can be monitored in real time during the wafer and spindle rotation process and the risk of winding during wafer rotation can be avoided. The sensor adopts a distributed design, which can monitor the distribution of the grinding force along the wafer radial direction or crystal orientation.

A method for controlling an eyeglass lens processing device includes: polishing the lens, and measuring a separation distance between a movable block and a carriage using a Hall sensor detection unit, in an n.sup.th rotation direction of what is obtained by equally dividing an angle of 360 degrees covered by one rotation of the lens rotation axis into m (S100); determining whether the separation distance in the n.sup.th rotation is less than a predetermined separation distance upper limit (S200); determining whether the separation distance in the n.sup.th rotation is greater than or equal to a predetermined separation distance lower limit (S300) if the separation distance in the n.sup.th rotation is less than the predetermined separation distance upper limit in S200; and rotating the lens to an n+1.sup.th rotation position (S400) if the separation distance in the n.sup.th rotation is greater than or equal to the predetermined separation distance lower limit in S300.

A grinding apparatus includes a holding table that holds a wafer, a grinding unit that grinds an exposed surface of the wafer held by the holding table, a detecting unit that detects a physical quantity used for determination of the state of exposure of a separation surface of the wafer, and a control unit having an exposure determining unit that determines the state of exposure of the separation surface on the basis of the physical quantity detected by the detecting unit.

A grinding apparatus includes a holding table that holds a wafer, a grinding unit that grinds an exposed surface of the wafer held by the holding table, a detecting unit that detects a physical quantity used for determination of the state of exposure of a separation surface of the wafer, and a control unit having an exposure determining unit that determines the state of exposure of the separation surface on the basis of the physical quantity detected by the detecting unit.

A grinding method for grinding a workpiece includes a first grinding step of grinding the workpiece in such a manner that an outer circumferential part of the workpiece becomes thinner than a central part of the workpiece, a measurement step of measuring the thickness of the workpiece at the outer circumferential part, and a second grinding step of grinding the workpiece. In the second grinding step, the grinding is started from the central part of the workpiece and the grinding is ended when the workpiece reaches a finished thickness decided based on the thickness of the workpiece at the outer circumferential part measured in the measurement step.

A grinding method for grinding a workpiece includes a first grinding step of grinding the workpiece in such a manner that an outer circumferential part of the workpiece becomes thinner than a central part of the workpiece, a measurement step of measuring the thickness of the workpiece at the outer circumferential part, and a second grinding step of grinding the workpiece. In the second grinding step, the grinding is started from the central part of the workpiece and the grinding is ended when the workpiece reaches a finished thickness decided based on the thickness of the workpiece at the outer circumferential part measured in the measurement step.

Provided is an automatic grinding apparatus, comprising a grinding wheel, a support, a feeding device, a control device, a first detector, a second detector, a third detector, and a fourth detector, wherein the control device is further configured to, before processing using the grinding wheel is started, calculate a range in which the grinding wheel and the support are relatively moved on the basis of information on positions of a surface of a workpiece and an outer peripheral end portion and an end surface of the grinding wheel detected by the first detector, the second detector, the third detector, and the fourth detector, to move the grinding wheel or the support by controlling the feeding device, and to automatically start the processing using the grinding wheel.

The present disclosure provides an automatic chuck apparatus comprising a mechanical chuck, a mechanical chuck mounting bracket, a hydraulic motor, a lifting mechanism, a chuck key and a lifting cylinder. The mechanical chuck is mounted above the mechanical chuck mounting bracket. The hydraulic motor, the lifting mechanism and the lifting cylinder are mounted below the mechanical chuck mounting bracket. The hydraulic motor is configured to control the rotation of the chuck key, the lifting cylinder is configured to drive the chuck key to ascend or descend through the lifting mechanism, thereby the mechanical chuck is locked or loosened by the chuck key. The present disclosure further provides a grinding wheel cutting apparatus and a cutting method. In the present disclosure, the locking of the chuck is automatically controlled, thereby improving the working efficiency and ensuring sufficient locking force of the chuck.

The substrate polishing system, according to an example embodiment, includes a plurality of polishing apparatuses configured to sequentially polish a substrate, and each of the polishing apparatuses includes a polishing platen polishing a substrate, a data collector collecting a signal generated in a polishing process of the substrate, a data analyzer detecting a thickness of a substrate by analyzing the collected signal, and a polishing endpoint detector determining a polishing endpoint of a substrate based on the detected thickness of a substrate, and the plurality of polishing apparatuses is configured to share data with each other, and based on a polishing order of a substrate, the data obtained from one polishing apparatus of the plurality of polishing apparatuses is configured to be reflected in a detection process of a substrate thickness detection of another polishing apparatus of the plurality of polishing apparatuses in next sequence.