An apparatus includes a first metrology tool configured to measure an initial thickness of a wafer. The apparatus includes a controller connected to the first metrology tool and configured to calculate a polishing time based on a material removal rate, a predetermined thickness and the initial thickness of the wafer. The apparatus includes a polishing tool connected to the controller and configured to polish the wafer for a first duration equal to the polishing time. The apparatus includes a second metrology tool connected to the controller and configured to measure a polished thickness. The controller is configured for receiving the initial thickness from the first metrology tool and the polished thickness from the second metrology tool, updating the material removal rate based on the predetermined thickness, the polishing time and the polished thickness, and calculating an etching time for etching the polished wafer using the polished thickness.

An apparatus includes a first metrology tool configured to measure an initial thickness of a wafer. The apparatus includes a controller connected to the first metrology tool and configured to calculate a polishing time based on a material removal rate, a predetermined thickness and the initial thickness of the wafer. The apparatus includes a polishing tool connected to the controller and configured to polish the wafer for a first duration equal to the polishing time. The apparatus includes a second metrology tool connected to the controller and configured to measure a polished thickness. The controller is configured for receiving the initial thickness from the first metrology tool and the polished thickness from the second metrology tool, updating the material removal rate based on the predetermined thickness, the polishing time and the polished thickness, and calculating an etching time for etching the polished wafer using the polished thickness.

Provided is a double-side polishing apparatus and a double-side polishing method which make it possible to terminate double-side polishing with timing allowing a work having been polished to have a target shape. A computing unit 13 performs a step of grouping the data of thicknesses measured using work thickness measuring devices 11 on a work basis; a step of extracting shape components of each work from the thickness data; a step of identifying a position of each of the shape components in the work radial direction; a step of computing a shape distribution of the work from the identified position ; a step of obtaining a shape index of the work from the computed shape distribution; and a step of determining timing of termination of the double-side polishing based on the obtained shape index, thus timing of termination of the double-side polishing is determined.

Embodiments of the present disclosure generally provide methods, polishing systems with computer readable medium having the methods stored thereon, to facilitate consistent tensioning of a polishing article disposed on a web-based polishing system. In one embodiment, a substrate processing method includes winding a used portion of a polishing article onto a take-up roll of a polishing system by rotating a first spindle having the take-up roll disposed thereon; measuring, using an encoder wheel, a polishing article advancement length of the used portion of the polishing article wound onto the take-up roll; determining a tensioning torque to apply to a supply roll using the measured polishing article advancement length; and tensioning the polishing article by applying the tensioning torque to the supply roll.

Embodiments of the present disclosure generally provide methods, polishing systems with computer readable medium having the methods stored thereon, to facilitate consistent tensioning of a polishing article disposed on a web-based polishing system. In one embodiment, a substrate processing method includes winding a used portion of a polishing article onto a take-up roll of a polishing system by rotating a first spindle having the take-up roll disposed thereon; measuring, using an encoder wheel, a polishing article advancement length of the used portion of the polishing article wound onto the take-up roll; determining a tensioning torque to apply to a supply roll using the measured polishing article advancement length; and tensioning the polishing article by applying the tensioning torque to the supply roll.

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

A portable cutting machine is provided. The portable cutting machine comprises: a cutting portion including a disc-shaped cutting blade that cuts an object to be cut by rotating, and a first rotation axis that serves as a rotation center of the cutting blade; a drive portion including a drive source and a second rotation axis rotating by drive of the drive source; a transmission portion including a first pulley fixed to the first rotation axis, a second pulley fixed to the second rotation axis, and a belt looped around the first pulley and the second pulley, and configured to transmit a rotational force by the drive portion to the cutting portion; and a case including a storage space for storing the transmission portion and at least one communication portion that connect to the storage space and open to outside.

Grinding a surface of a workpieces is accomplished with a grinding machine having at least two grinding units. First, a target structure of the surface to be achieved is provided. Then, using predetermined grinding parameters, a first of the two grinding units is used to grind the surface of the structure. Then, the surface of the actual structure is captured and compared to the target structure. Based on the comparison, the grinding parameters are adjusted and the surface is then ground, using the adjusted parameters, with the second of the two grinding units.

Grinding a surface of a workpieces is accomplished with a grinding machine having at least two grinding units. First, a target structure of the surface to be achieved is provided. Then, using predetermined grinding parameters, a first of the two grinding units is used to grind the surface of the structure. Then, the surface of the actual structure is captured and compared to the target structure. Based on the comparison, the grinding parameters are adjusted and the surface is then ground, using the adjusted parameters, with the second of the two grinding units.

Automated systems and methods of using a smart end-effector tool to prepare (e.g., scuffing, abrading, sanding, polishing, etc.) an object surface are provided. The smart tool can update its working state with a robot arm in real time, which in turn adjusts locomotion parameters to optimize the tool's working state on the object surface.