Patent classifications
B24D11/003
CHEMICAL PLANARIZATION
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.
POLISHING PAD AND METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING POLISHED PRODUCT
A polishing pad comprising a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated, and having a cross section cut in a surface direction of the knitted fabric, as a polishing surface.
Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads
A method for making a multilayer polishing pad includes rotating a cylinder about a central axis. The cylinder encloses in an interior space a single polymer mixture that phase separates under centrifugal force. The method also includes forming the polishing pad from at least some of a polymer formed after the polymer mixture has reacted. The method includes forming at least two distinct layers in the polishing pad by casting and gelling sequentially at least two different polymers.
Polishing pad and material and manufacturing method for such
A polishing pad for polishing a surface, material for a polishing pad and a method for manufacturing material for a polishing pad. A polishing pad has a backing layer and a polishing layer made of sheep wool fibres fixed onto a surface of the backing layer, wherein the polishing layer has loops made of sheep wool fibres.
Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.
COMPOSITE POLISHING PAD INCLUDING HIGHLY ABRASION-RESISTANT THIN FILM COATING BOUND WITH CARBON NANOTUBES, AND METHOD FOR PRODUCING SAME
The present invention provides a composite polishing pad for CMP, and a method for producing the same. The composite polishing pad for CMP comprises: a soft polymer substrate layer including a plurality of protrusions formed on the upper surface thereof; a carbon nanotube layer including carbon nanotubes embedded in and bound to the upper portion of the substrate layer; and a hard polymer coating layer having the carbon nanotubes protruding outwardly on the upper portion of the carbon nanotube layer embedded and bound thereto.
Polishing pad and process for producing same
Provided is a polishing pad which is capable of providing a high flatness to a polishing workpiece and suppressing the formation of scratches, and a method therefor. The polishing pad comprises a foamed urethane sheet on the surface which includes closed cells and open cells and which satisfies the following requirements: (1) an open cell ratio is 20-80 vol % where the total volume of closed cells and open cells is taken as 100 vol %, (2) the ratio [tan (wet/dry) ratio] of a loss factor tan in a water-absorption state to that in a dry state is 1.3-1.7, the loss factors being measured according to JIS K7244-4 with an initial load of 20 g at a measuring frequency of 1 Hz at a temperature of 26 C. in a tensile mode over a strain range from 0.01 to 0.1%, and (3) the Shore DO hardness according to ASTM D2240 is 60-80.
Double-sided buffing pads with intertwined seams
Provided are buffing pads that have intertwined seams such that any hard or unyielding edges are covered and not exposed during a buffing or polishing process. A double-sided buffing pad for polishing surfaces comprises a backing plate; two fibrous buffing media with filaments of textiles extending therefrom that are affixed one media to each face of the backing plate; and a seam that is intertwined by a portion of the filaments from each media are intertwined. The filaments may be intertwined by needle-tacking, air entanglement, or hydro-entanglement.
Unique PDC microstructure and the method of making it
A superabrasive compact and a method of making the superabrasive compact are disclosed. A superabrasive compact may comprise a diamond table and a substrate. The diamond table may be attached to the substrate. The diamond table may include bonded diamond grains defining interstitial channels. The interstitial channels may be filled with non-catalytic binder materials in some regions. The interstitial channels in some other regions may be filled with a catalytic materials from the substrate.
A POLISHING PAD AND MATERIAL AND MANUFACTURING METHOD FOR SUCH
A polishing pad for polishing a surface, material for a polishing pad and a method for manufacturing material for a polishing pad. A polishing pad has a backing layer and a polishing layer made of sheep wool fibres fixed onto a surface of the backing layer, wherein the polishing layer has loops made of sheep wool fibres.