There is described a connection assembly (24) for a high-pressure liquid metal supply system used in an EUV light source comprising a monolithic block, wherein the monolithic block includes: at least one connection (21) for connecting to a reservoir (18,19) configured to hold liquid metal; interior passages (25) configured to fluidly connect the at least one connection with at least two liquid metal outlets/inlets (22, 23); at least two freeze valves (15,16,17) configured to block a passage by solidifying liquid metal therein. Also described is a liquid metal storage assembly including such a connection assembly, a lithography apparatus including such a liquid metal storage assembly or such a connection assembly, as well as the use of such assemblies or apparatus in a lithographic apparatus or method.

A photolithographic apparatus includes a droplet generator, a droplet generator maintenance system, and a controller communicating with the droplet generator maintenance system. The droplet generator maintenance system operatively communicates with the droplet generator, a coolant distribution unit, a gas supply unit, and a supporting member. The gas supply unit includes a heat exchange assembly and an air heating assembly. The coolant distribution unit is configured to control the temperature of the droplet generator within the acceptable droplet generator range.

An extreme-ultraviolet light source device comprises: a discharge chamber of which the inside is maintained in a vacuum; an electron beam-emitting unit which is located inside the discharge chamber and produces electron beams; and a metal radiator which is located inside the discharge chamber and is ionized by the electron beams. Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator. The electron beam-emitting unit comprises: a cathode electrode; a plurality of emitters located on the cathode electrode and including a carbon-based material; and a gate electrode which is located on the plurality of emitters at a distance therefrom and to which a pulse voltage is applied.

A laser-sustained broadband light source is disclosed. The light source may include a gas containment structure for plasma generation. The gas containment structure may include a first portion formed from a first grade of sapphire and a second portion formed from a second grade of sapphire. The first portion is coupled to one or more sections of the second portion of second grade sapphire. The light source may include sapphire-to-sapphire bonding between the first-grade sapphire of the first portion and the second-grade sapphire of the second portion, thereby eliminating metal-to-sapphire brazing and avoiding exposure of metal components to destructive UV and/or VUV light. The light source may include a primary laser pump source configured to direct a primary pump beam into the gas containment structure to sustain a plasma and a light collector element configured to collect broadband light emitted from the plasma.

An EUV light generation apparatus includes a chamber having internal pressure maintained below atmospheric pressure; a first bellows pipe having one end connected to the chamber; a first cover member which seals the other end under atmospheric pressure; a holder connected to the first cover member and arranged inside the chamber in a state of holding an optical element; a stage mechanism connected to the first cover member outside the chamber and configured to change at least either a position or an angle of the optical element with respect to the EUV light; a fixing member which fixes the stage mechanism to the chamber; and a cancellation mechanism which is connected to the holder to be movable in accordance with change of at least either the position or the angle, and transmits, to the holder, a second load opposite to a first load applied to the first cover member.

A light source apparatus, in which an energy beam transforms a liquid raw material into plasma to extract radiation, includes a rotation body, a raw material supply section, and an electric field applying section. The rotation body is disposed at a position onto which the energy beam is incident. The raw material supply section supplies the liquid raw material to the rotation body. The electric field applying section is set to a potential different from a potential of the liquid raw material that has been supplied to the rotation body, and applies an electric field to a plasma generation area in which plasma is to be generated by irradiation of the energy beam.