B28D1/221

Method for separating thin layers of solid material from a solid body
11201081 · 2021-12-14 · ·

Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

Wafer processing method including crushed layer and wafer processing apparatus
11721584 · 2023-08-08 · ·

A wafer is processed by irradiating a region to be divided with a pulse laser beam with a wavelength having absorbability to generate a thermal stress wave and propagate the wave to the inside of the region to be divided. A crushed layer is formed by executing irradiation, with a pulse laser beam with a wavelength having transmissibility with respect to the wafer, matching with a time when the thermal stress wave is generated and reaching a depth position at which a point of origin of dividing is to be generated at a sonic speed according to the material of the wafer. Absorption of the pulse laser beam with the wavelength having the transmissibility in a region in which the band gap is narrowed due to a tensile stress of the thermal stress wave forms a crushed layer that serves as the point of origin of dividing.

DEVICE FOR CUTTING, MOBILE WORKING MACHINE, METHOD AND GRIPPING MEMBER
20230294197 · 2023-09-21 · ·

The invention relates to a cutting device (1) of a mobile working machine, for cutting elongated objects (2), in particular piles (2), and for being connected to a mobile working machine, comprising a first gripping member (101) and a second gripping member (102), which gripping members (101,102) are pivotal around the same pivot axis (X), said gripping members (101,102) having gripping faces (101a,102a) delimiting from opposite sides a gripping gap (G) as viewed in direction of said pivot axis (X); and moving means (103) actuatable to move the gripping members (101,102) towards and away from each other; and cutting means (104) including a cutting unit (1040) for cutting an elongated object (2) placed in the gripping gap (G); wherein the gripping face (101a,102a) of each gripping member (101,102) is shaped to have a gripping recess (R) for receiving a side of the elongated object (2) placed in the gripping gap (G), the gripping recess (R) comprising: a bottom point (C0) via which a circle (Y1) passes, which circle (Y1) has said pivot axis (X) as centre; and a first flank portion (Pa) having a profile curved towards the bottom point (C0) from the outer side of the circle (Y1); and a second flank portion (Pb) having a profile curved towards the bottom point (C0) from the inner side of the circle (Y1). The invention also relates to a mobile working machine (200), a method for cutting an elongated object (2) and a gripping member (101,102).

Nonplanar wafer and method for producing a nonplanar wafer
11786995 · 2023-10-17 · ·

A method for cutting off at least one portion, in particular a wafer, from a solid body is contemplated. The method includes: modifying the crystal lattice of the solid body by means of a modifier, wherein a number of modifications are produced to form a nonplanar, in particular convex, detachment region in the interior of the solid body, wherein the modifications are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion and a defined further treatment of the portion, detaching the portion from the solid body.

WAFER MANUFACTURING METHOD
20230321871 · 2023-10-12 ·

A wafer manufacturing method includes a peeling start point forming step of applying, to an ingot, a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be manufactured, from an end face of the ingot, to form a peeling start point, and a peeling step of peeling off, from the peeling start point, the wafer to be manufactured from the ingot. In the peeling step, degassed water is supplied to the end face of the ingot to generate a degassed water layer, and an ultrasonic wave is applied to break the peeling start point.

Pulsed laser method for machining a diamond

A method of machining a diamond includes using a pulsed laser. The diamond is placed in a container containing a transparent liquid. The liquid level is at least 100 microns above a surface of the diamond to be machined, and the transparent liquid can further contain a surfactant additive in an amount of at least 2% and 10% by mass. Next, a laser source is activated such that a laser beam with pulse durations of no longer than one microsecond at a repetition frequency of no more than 5 kHz is applied to the surface to be machined, and relative scanning is performed between the diamond and the laser source, cross-wise to the laser beam and axially in depth, with an amplitude and orientations that are determined by the shape to be machined in the diamond.

METHOD FOR FORMING A CRACK IN AN EDGE REGION OF A DONOR SUBSTRATE

A method for separating a solid-body layer from a donor substrate includes: providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface; producing a plurality of modifications within the donor substrate using at least one LASER beam, wherein the at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate; producing a stress-inducing polymer layer on the planar surface of the donor substrate; and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer, wherein the mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

METHODS OF SEPARATING A GLASS WEB
20210230043 · 2021-07-29 ·

Methods of separating a glass web that is moving at a glass web velocity. The method includes exposing a separation path on the glass web to at least one laser beam spot that moves with a laser beam spot velocity vector that is equal to a glass web velocity vector in a conveyance direction. The method also includes creating a defect on the separation path while the separation path is under thermal stress from the laser beam spot, whereupon the glass web spontaneously separates along the separation path in response to the defect. In further examples, a glass web separation apparatus includes a first reflector that rotates such that a laser beam spot repeatedly passes along a separation path and a second reflector that rotates such that the laser beam spot moves in a conveyance direction of the glass web.

WAFER PROCESSING METHOD AND WAFER PROCESSING APPARATUS
20210233814 · 2021-07-29 ·

A wafer is processed by irradiating a region to be divided with a pulse laser beam with a wavelength having absorbability to generate a thermal stress wave and propagate the wave to the inside of the region to be divided. A crushed layer is formed by executing irradiation, with a pulse laser beam with a wavelength having transmissibility with respect to the wafer, matching with a time when the thermal stress wave is generated and reaching a depth position at which a point of origin of dividing is to be generated at a sonic speed according to the material of the wafer. Absorption of the pulse laser beam with the wavelength having the transmissibility in a region in which the band gap is narrowed due to a tensile stress of the thermal stress wave forms a crushed layer that serves as the point of origin of dividing.

Method for forming a crack in the edge region of a donor substrate, using an inclined laser beam

The invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), producing at least one modification (10) within the donor substrate (2) by means of at least one LASER beam (12), wherein the LASER beam (12) penetrates the donor substrate (2) via a planar surface (16) of the donor substrate (2), wherein the LASER beam (12) is inclined with respect to the planar surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate, wherein the LASER beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solid-body slice (1) detaches from the donor substrate (2) as a result of the modifications (10) produced or a stress-inducing layer (14) is produced or arranged on the planar surface (16) of the donor substrate (2) and mechanical stresses are produced in the donor substrate (2) by a thermal treatment of the stress-inducing layer (14), wherein the mechanical stresses produce a crack (20) for separating a solid-body layer (1), which crack propagates along the modifications (10).