A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

The invention relates to a method of producing a substrate. The method comprises providing a workpiece having a first surface and a second surface opposite the first surface, and providing a carrier having a first surface and a second surface opposite the first surface. The method further comprises attaching the carrier to the workpiece, wherein at least a peripheral portion of the first surface of the carrier is attached to the first surface of the workpiece, and forming a modified layer inside the workpiece. Moreover, the method comprises dividing the workpiece along the modified layer, thereby obtaining the substrate, wherein the substrate has the carrier attached thereto, and removing carrier material from the side of the second surface of the carrier in a central portion of the carrier so as to form a recess in the carrier. The invention further relates to a substrate producing system for performing this method.

A method of separating a wafer including rows of light emitting devices is described. Dicing streets are provided on the wafer such that a respective one of the dicing streets is provided between each of the rows of light emitting devices on the wafer. The wafer is broken along a first one of the dicing streets to separate a first portion of the wafer from a remaining portion of the wafer. The first portion of the wafer includes more than one of the rows of light emitting devices. The first portion of the wafer is broken along a second one of the dicing streets to separate a second portion of the wafer from the first portion of the wafer.

The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individual property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).

A production method of a wafer includes a wafer production step in which ultrasonic water is ejected against an end face of an ingot with cleavage layers created therein, thereby severing the wafer from a rest of the ingot to produce the wafer.

A water production system includes a filter unit that filters water to produce clear water, an ultraviolet light irradiator that irradiates, with ultraviolet light, the clear water produced by the filter unit, thereby degrading organic matter in the clear water, an ion exchange resin unit that purifies the clear water, in which the organic matter has been degraded by the ultraviolet light irradiator, into pure water, and a deaerated water production unit that deaerates the pure water to produce deaerated water.

A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.

A dividing apparatus is provided with a second camera that forms a second image to be used for determining whether or not a wafer is divided at a first projected dicing line. That is, in the dividing apparatus, whether or not the wafer is divided at the first projected dicing line can be checked in reference to the second image. Hence, in the dividing apparatus, even in a case where part of the wafer remains at the first projected dicing line and the wafer is not divided, a dividing unit can be operated again to divide the wafer at the first projected dicing line. Consequently, in the dividing apparatus, the wafer can reliably be divided at the first projected dicing line.

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

A peel-off layer is finally formed in an area, i.e., a first inner area or a second inner area, in a workpiece that is closer to the center of the workpiece among a plurality of areas. The workpiece has a cylindrical shape, so that the second inner area is wider than the other areas, e.g., the second outer area, in which the peel-off layers are formed. Consequently, when the peel-off layer is finally formed in the second inner area, the internal stresses in the workpiece are dispersed in a wider range than when the peel-off layer is finally formed in the second outer area. Thus, large cracks thicknesswise of the workpiece are prevented from being developed from modified regions contained in the peel-off layer. Therefore, the amount of workpiece material to be disposed of in subsequent steps is reduced, resulting in increased manufacturing productivity.