A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer.

In a semiconductor chip manufacturing device which produces a plurality of LD chips by dividing a semiconductor wafer, being placed in a casing in which a fluid medium is filled, on which a block line is formed in advance and also on which a scribed line is inscribed so that a microcrack is formed along the scribed line, the semiconductor chip manufacturing device comprises a reception stage for supporting the semiconductor wafer, and a blade cutting-edge for pressurizing the semiconductor wafer along its crack portion made of the block line or the scribed line, so that the semiconductor wafer is divided into a plurality of LD chips by pressurizing it by means of the blade cutting-edge along the crack portion in the fluid medium.

The present application provides a residual material removing device, method and system, in which the residual material removing device includes: a loading platform configured to support a material to be cut; a fixing plate abutting against an upper surface of the material to be cut is configured to fix the material to be cut, and one end of the fixing plate is in contact with a residual material in the material to be cut; a first pressing portion in contact with one end of the fixing plate is configured to apply pressing force to one end of the fixing plate to separate the residual material from the material to be cut under the action of the pressing force.

A method for silicon carbide ingot peeling includes the steps of: placing the silicon carbide ingot between first and second suckers; having a pressing head disposed on a top surface of the first sucker to apply mechanical oscillatory energy to both the silicon carbide ingot and the second sucker through the first sucker; and, having an elastic element disposed under the second sucker to absorb part of the mechanical oscillatory energy to transmit longitudinal waves thereof to a modified layer of the silicon carbide ingot for propagating individually intermittent invisible cracks at the modified layer to break silicon carbide chains at different levels. Till the cracks connect together for forming a continuous crack across the silicon carbide ingot, a top portion of the silicon carbide ingot is then separable therefrom to form a wafer. In addition, an apparatus for silicon carbide ingot peeling is also provided.

A wafer processing method is disclosed to divide a wafer of glass substrate into individual chips along division lines. In the shield tunnel forming step, a pulsed laser beam of a wavelength, which transmits through the wafer, is irradiated with its focal point positioned at a region corresponding to each division line so that a plurality of shield tunnels which are each formed of perforations and affected regions surrounding the perforations are formed along the division lines, respectively. In the modified layer forming step, another pulsed laser beam of a wavelength, which transmits through the wafer, is irradiated with its focal point positioned at the region corresponding to each division line so that modified layers are formed in addition to the shield tunnels along the division lines, respectively. In the dividing step, an external force is applied to the wafer to divide the wafer into individual chips.

A dividing device divides a wafer from an ingot by slicing the ingot by using a dividing layer which is formed by relatively moving a laser beam to a predetermined depth of the ingot from one of both end faces of the ingot. The dividing device for a wafer includes: first fixing part that fixes the other of the both end faces of the ingot; second fixing part that is arranged on a first central axis line of the ingot so as to face the first fixing part and fixes the one of the both end faces of the ingot; and tension part that apply a tensile force to the ingot via the first and second fixing parts. The tension part rotates one end of the dividing layer with another end as a fulcrum so as to generate moments for slicing the ingot with the dividing layer as a boundary.

A cutting apparatus includes a cutting unit configured to cut a workpiece held on a chuck table, and a groove detecting unit including a CCD imaging element photographing the workpiece held on the chuck table. The groove detecting unit photographs, by the CCD imaging element, a laser-processed groove and a cut groove illuminated by an oblique illumination set such that a light amount of light in a direction parallel with an extending direction of the laser-processed groove as viewed in plan is higher than a light amount of light in a direction orthogonal to the extending direction of the laser-processed groove.

A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.

A device and method for cleaving a sample includes: creating an indentation on a top surface of the sample by applying a downward force along a vertical axis, the axis perpendicular to the top surface of the sample; providing a breaking pin located under the sample to touch the bottom surface of the sample at a position that is directly opposite from the indentation; and, a cleaving bar for applying a downward force on the sample by providing a left side and right side breaker pin wherein the downward force comprises a left-side downward force extended through the left-side breaker pin and right-side downward force through the right side breaker pin. Further, the pins that provide the left-side and right-side downward force are disposed on a breaker bar and arranged to be on opposite sides of a vertical axis that extends through the indentation on the top surface.

There is provided a processing method for a package substrate having a plurality of division lines formed on the front side. The processing method includes the steps of holding the back side of the package substrate by using a holding tape and fully cutting the package substrate along the division lines to such a depth corresponding to the middle of the thickness of the holding tape by using a profile grinding tool, thereby dividing the package substrate into individual semiconductor packages. The profile grinding tool has a plurality of projections for cutting the package substrate respectively along the plural division lines. Each projection has an inclined side surface.