A generation method of semiconductor wafers is provided, including: setting a count of laser scans, setting a scanning path for each laser scan and a point spacing between two adjacent modified points on the scanning path; determining, based on a predetermined rule for each laser scan, a laser scanning speed and a laser pulse repetition frequency required to achieve the point spacing and determining a corresponding diameter of a modified point, and determining laser pulse energy required to achieve the diameter of the modified point and an offset distance of a laser focal point relative to a predetermined peeling surface; performing n times of the laser scans on the predetermined peeling surface inside a crystal ingot on which a pulse laser focuses or below the predetermined peeling surface to form a modified point on the predetermined peeling surface and forming an overlapping region between the modified points formed by at least two laser scans to form a crack extending transversely along the predetermined peeling surface in the overlapping region; and peeling the crystal ingot along the predetermined peeling surface to obtain a wafer and a remaining ingot.

A method for manufacturing a semiconductor wafer includes steps of: preparing a peeling object including a single crystal body of a semiconductor having a pair of major surfaces composed of front and back surfaces, the peeling object having a peeling layer provided along at least one of the major surfaces; applying a tensile stress to the peeling object to cause a first major surface and a second major surface to be separated from each other; forming a stress-concentrated region in the peeling layer positioned inside an outer peripheral edge in a radial direction of which the center is a center axis orthogonal to the major surface; and propagating cracks from the stress-concentrated region as a starting point, thereby peeling between a first side portion and a second side portion of the peeling object having the peeling layer interposed therebetween in a direction parallel to the center axis.

A cooling slicing method for generating wafer includes the following steps: coating a liquid water-soluble medium on an end surface of an ingot and/or a clamping surface of a temperature-controlled clamp, and cooling and solidifying the water-soluble medium under the action of the temperature-controlled clamp to complete fixing of the ingot between a pair of temperature-controlled clamps; and moving at least one temperature-controlled clamp until a modified layer of the ingot is separated, and after peeling is completed, heating and liquefying the solid water-soluble medium under the action of the temperature-controlled clamp to obtain a wafer and remaining ingot. The method has the advantages of high peeling efficiency, saved cleaning process, easy control of peeling conditions, low risk of cracking, simple operation, and suitability for large-scale industrial applications.

Disclosed are an upper jacking structure, a half-slitting machine and a half-slitting method. The upper jacking structure includes a lower jacking block, a cutting assembly, a first linear reciprocating device, an upper jacking block and an auxiliary tensioner. The lower jacking block is located below the upper jacking block, a clamping space is formed between the lower jacking block and the upper jacking block, a cutting end of the cutting assembly moves in a vertical direction and a horizontal direction in and out of the clamping space, a movable end of the first linear reciprocating device moves in the vertical direction, and the upper jacking block is provided on the movable end of the first linear reciprocating device; the upper jacking block has a first jacking surface provided with a first jacking head and a second jacking head at either side of a center line of the first jacking surface.

A system and method for detecting completion of ingot slicing process are provided. The method includes: holding an ingot's top and bottom surfaces with upper and lower suction cups; applying a pulling force via the upper suction cup with a load cell while an ultrasonic source vibrates the ingot; turning off the ultrasonic source when the pulling force is below a set value; performing an abnormality handling process if vacuum is not maintained between the upper suction cup and wafer or between the lower suction cup and ingot bottom, or if vacuum pressure detected by a negative pressure proportional regulator valve is below a threshold value; releasing the wafer onto a receiving tray; performing the abnormality handling process if cracks on the surface of the wafer is detected; and performing the abnormality handling process if the space between a fork suction cup and the wafer is not kept vacuum.