A processing method for reducing warp of a nitrogen-doped wafer includes dividing a to-be-cut nitrogen-doped crystal ingot into a plurality of to-be-processed crystal ingot segments according to nitrogen content distribution, where each to-be-processed ingot segment corresponds to a nitrogen content range. The method further includes determining a processing condition corresponding to each to-be-processed crystal ingot segment according to correspondences between nitrogen content ranges and processing conditions, where the processing condition enables the corresponding to-be-processed crystal ingot segment to be prevented from warping during wire sawing; and performing cutting processing respectively on the each to-be-processed crystal ingot segment by using the processing condition corresponding to each to-be-processed crystal ingot segment, thereby obtaining a wafer by cutting the to-be-cut nitrogen-doped crystal ingot.

A cutting blade detecting mechanism is provided in a cutting apparatus including a chuck table for holding a workpiece and a cutting blade having an annular cutting edge for cutting the workpiece held on the chuck table while the workpiece is being cutting-fed in an X-axis direction. The cutting blade detecting mechanism has a blade detecting unit configured to detect the state of the cutting edge of the cutting blade. The blade detecting unit includes an image capturing unit configured to capture an image of the cutting edge in the X-axis direction, a light emitter disposed in a position opposite the image capturing unit and facing the cutting edge, and a decision unit configured to determine the state of the shape of a tip end of the cutting edge from the image of the cutting edge which has been captured by the image capturing unit.

In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

A wire saw abnormality diagnosis device and a wire saw abnormality diagnosis method are provided. The abnormality diagnosis device includes: a diagnosis mode executer that executes a first diagnosis mode, a second diagnosis mode, and a third diagnosis mode before the cutting; a data group acquirer that acquires a first data group, a second data group, and a third data group for pluralities of data items indicating operating states of the wire saw; a deviation information calculator that calculates deviation information relating to deviations derived by comparing a first reference data group, a second reference data group, and a third reference data group with the first data group, the second data group, and the third data group for the pluralities of data items; and a determiner that determines presence or absence of an abnormality in the wire saw based on the calculated deviation information.

In CNC wire cutting process, the deflection of the wire due to cutting force is proportional to square of the wire length. Hence it is beneficial to adjust wire length as per job size and keep it minimal. But existing wire cutting machines, wire length adjustment is not feasible. Hence there is a need to develop a simple user-friendly method of wire length adjustment. This invention proposes a simple user-friendly method of wire length adjustment in abrasive wire (100A) and hot wire cutting (100B) machines. This invention also proposes an intelligent faster cutting method without affecting wire life or pulley life. This invention also proposes an intelligent method of start point selection in CNC wire cutting machines, to avoid part defects.

Provided is a wire sawing device comprising an ingot temperature controller, the wire sawing device comprising: a chamber; an ingot clamp supporting an ingot inside the chamber; a first roller and a second roller; a wire which is wound around the first roller and the second roller and cuts the ingot into a plurality of wafers by rotating; a temperature measuring unit which is mounted inside the chamber, in which the ingot is cut, and measures the temperature of the ingot; and a heater unit mounted inside the chamber.

Semiconductor wafers are produced from a workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires tensioned between wire guide rollers and divided into wire groups, the wires moving in a running direction producing kerfs as wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups determined, and for each of the wire groups compensating movements of the wires of the wire group are induced as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.

In accordance with the following step of a method of manufacturing a MOSFET, a first cutting step of cutting a silicon carbide wafer along a plane substantially parallel to a {11-20} plane is performed. After the first cutting step, a second cutting step of cutting the silicon carbide wafer along a plane substantially perpendicular to the {11-20} plane and substantially perpendicular to the first main surface is performed.

Cleave systems for separating bonded wafer structures, mountable cleave monitoring systems and methods for separating bonded wafer structures are disclosed. In some embodiments, the sound emitted from a bonded wafer structure is sensed during cleaving and a metric related to an attribute of the cleave is generated. The generated metric may be used for quality control and/or to adjust a cleave control parameter to improve the quality of the cleave of subsequently cleaved bonded wafer structures.

Provided are a method for cutting silicon rod and an apparatus for diamond multi-wire cutting, the method for cutting silicon rod includes: using a cooling pipe to supply cutting fluid to the diamond wire, and using the diamond wire to cut the silicon rod, wherein the distance between the supply position of the cutting fluid and the periphery of the silicon rod is 10-20 mm; or adjusting the new wire running amount and/or feed speed at different positions of the crystal cross section during the cutting process.