The present subject matter discloses a longitudinal silicon ingot slicing apparatus for lateral slicing of cylindrical ingot to maximize resulting chips yield as compared to the conventional transverse slicing of ingot. The resulting rectangular wafers made from lateral slicing of ingot maximizes yield as by the lateral slicing of ingot, overall chips per wafer ratio gets increased as compared to transversal cutting while the said apparatus and method decreases waste due to conflict between chip and wafer geometry. The novel apparatus of longitudinal slicing of cylindrical ingot is comprising of a wire wounded around a wire reels and a plurality of grooved rollers to form a wire raw to slice the cylindrical silicon ingot. A motors are connected with the wire reels and with at least one grooved roller to slide the wire row back and forth to cut the cylindrical ingot. A work feed table is also configured along with the JIG fixture that holds the cylindrical ingot as well as align the wire raw during slicing.

A technology for processing (and/or working) a gemstone is provided, and specifically, a method for, and an apparatus for manufacturing a high-hardness diamond simulant by cutting a gemstone into a 100-sided body are provided.

Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.

A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

A chuck table holding a frame unit including a workpiece is securely placed in an opening of an annular frame by a tape. A transparent holder having a holding surface holds the workpiece with the tape interposed therebetween. A frame body is erected around and surrounding the holder, the frame body having a plurality of suction holes that are open in an inner circumferential surface of the frame body. The frame body has an inside diameter equal to or smaller than an inside diameter of the annular frame. While an opening of the frame body is being covered by the tape, a suction force is transmitted through the suction holes into the frame body, discharging air from between the tape and the holding surface to bring the tape into intimate contact with the holding surface thereby securing the workpiece of the frame unit to the holding surface.

In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

A method for exposing a buried defect, the method may include illuminating, by a radiation source, an object that comprises the buried defect, with illuminating radiation that passes through radiation transparent part of a chuck, while the object is supported by the chuck; detecting, by a sensor, a detected radiation that passed through the object, to provide a visual indication about the buried defect, wherein the visual indication is indicative of a location of the buried defect; setting, based on the location of the buried object and a spatial relationship between a cleaving element and the sensor, a cleaving axis of a cleaving element to virtually cross the buried defect; and cleaving, by the cleaving element, the object to expose the buried object.

A method and device for simulating a production duration of a silicon-wafer slicer, including: constructing a slicer simulating model, wherein the slicer simulating model includes process-step data of the slicer, and the process-step data include: a loading process step, a cutting process step, a discharging process step, a rinsing process step, a waiting process step, a broken-line replacing process step, a guide-pulley replacing process step, a home-roll replacing process step and a paying-off-wheel replacing process step; in the slicer simulating model, according to a predetermined rule, obtaining a process-step-to-be-executed datum; according to historical data, for the process-step-to-be-executed datum, assigning duration data that individually correspond to the process-step-to-be-executed data, wherein the historical data include: historical duration data that individually correspond to the process-step data of the slicer; and executing sequentially the process steps in the process-step-to-be-executed data, and obtaining a sum of the duration data of the process steps.

A cutting machine includes a monitoring unit that monitors a cutting edge of a cutting blade. The monitoring unit includes an imaging unit that images the cutting edge of the cutting blade, a pulse light source that emits a pulse light to illuminate an imaging zone imaged by the imaging unit, and a camera that captures an image outputted from the imaging unit. The imaging unit includes a first imaging unit that images one side surface of the cutting edge of the cutting blade, a second imaging unit that images an opposite side surface of the cutting edge, and a third imaging unit that images an outer peripheral edge portion of the cutting edge.

An edge alignment method includes (a) calculating coordinates of points having a possibility of corresponding to an edge of the workpiece, (b) forming an approximate circle by using a least squares method on all the coordinates, (c) calculating deviations between the approximate circle and respective ones of all the points, and if plural ones of the points have deviations greater than or equal to a preset threshold, respectively, then determining the point, the deviation of which is greatest, to be a false detection position, and excluding from consideration candidates the point determined to be the false detection position, and (d) estimating a position of the edge of the workpiece from the coordinates of three or more of the points still remaining without exclusion, and based on the estimated position of the edge, deriving a machining area at the outer peripheral portion of the workpiece.