Examples of gemstone verification are described herein. In one example, for processing a gemstone, pre-stored marking coordinates associated with a gemstone ID are obtained, the pre-stored marking coordinates generated during planning phase of the processing. Further, real-time marking coordinates for the gemstone to be processed are also obtained. An identity of the gemstone is verified based on a comparison of the pre-stored marking coordinates with the real-time marking coordinates. Further, information, including cutting parameters, associated with the gemstone ID of the gemstone is retrieved in response to a valid verification of the identity of the gemstone, for processing the gemstone.

A dividing apparatus includes a table having a transparent plate having a holding surface for holding a workpiece thereon and a lower illumination unit for illuminating the holding surface from below, a first storage section for storing a first image including a white portion where illumination light from the lower illumination unit is transmitted through the workpiece and displayed as white and a black portion where the illumination light is blocked by the workpiece and displayed as black when an image of a kerf defined by a dividing unit in the workpiece held on the holding surface is captured by an image capturing unit with the lower illumination unit being energized, and a white pixel detecting section for detecting whether or not there are pixels in the white portion of the first image in directions perpendicular to directions along which a street extends.

The present subject matter discloses a longitudinal silicon ingot slicing apparatus for lateral slicing of cylindrical ingot to maximize resulting chips yield as compared to the conventional transverse slicing of ingot. The resulting rectangular wafers made from lateral slicing of ingot maximizes yield as by the lateral slicing of ingot, overall chips per wafer ratio gets increased as compared to transversal cutting while the said apparatus and method decreases waste due to conflict between chip and wafer geometry. The novel apparatus of longitudinal slicing of cylindrical ingot is comprising of a wire wounded around a wire reels and a plurality of grooved rollers to form a wire raw to slice the cylindrical silicon ingot. A motors are connected with the wire reels and with at least one grooved roller to slide the wire row back and forth to cut the cylindrical ingot. A work feed table is also configured along with the JIG fixture that holds the cylindrical ingot as well as align the wire raw during slicing.

A chuck table holding a frame unit including a workpiece is securely placed in an opening of an annular frame by a tape. A transparent holder having a holding surface holds the workpiece with the tape interposed therebetween. A frame body is erected around and surrounding the holder, the frame body having a plurality of suction holes that are open in an inner circumferential surface of the frame body. The frame body has an inside diameter equal to or smaller than an inside diameter of the annular frame. While an opening of the frame body is being covered by the tape, a suction force is transmitted through the suction holes into the frame body, discharging air from between the tape and the holding surface to bring the tape into intimate contact with the holding surface thereby securing the workpiece of the frame unit to the holding surface.

The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individual property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).

A processing apparatus includes a chuck table for holding a workpiece, a processing unit for processing the workpiece held on the chuck table as supplying a processing water to the workpiece, and a water pan fixed to a bottom of the processing apparatus for receiving the processing water as a water leaked.

Cleave systems for separating bonded wafer structures, mountable cleave monitoring systems and methods for separating bonded wafer structures are disclosed. In some embodiments, the sound emitted from a bonded wafer structure is sensed during cleaving and a metric related to an attribute of the cleave is generated. The generated metric may be used for quality control and/or to adjust a cleave control parameter to improve the quality of the cleave of subsequently cleaved bonded wafer structures.

Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

A cutting apparatus includes a blade changing unit demounting an old cutting blade from a blade mount and mounting a new cutting blade to the blade mount. The blade changing unit includes a blade holder for holding a support base of each cutting blade and a moving portion for moving the blade holder in the axial direction of a boss portion of the blade mount in the condition where each cutting blade is held by the blade holder, thereby mounting the new cutting blade to the boss portion or demounting the old cutting blade from the boss portion. The cutting apparatus further includes a control unit controlling the blade changing unit. The control unit measures a signal indicating a force applied to the moving portion in mounting or demounting, and determines the condition of the blade changing unit and blade mount according to the signal measured by the measuring portion.