An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.

To provide a method of processing a tempered glass in which a length of time required for manufacturing one plate of a product glass is significantly reduced while the quality of the product glass is secured. In the method of processing the tempered glass in which a stacked block (1a) acting as a chemical tempered glass (1) is processed by using a processing device (8) under a condition that the processing device (8) is rotated and vibrated, the stacked block (1a) is cut out from a stack (1A) acting as the chemical tempered glass (1) by using a dicing blade (84), prior to the processing of the stacked block (1a) by using the processing device (8), and a finishing to an outer periphery of the stacked block (1a) is also performed during the processing of the stacked block (1a) by using the processing device (8).

A semiconductor substrate manufacturing method includes: epitaxially growing a columnar III nitride semiconductor single crystal on a principal place of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region. The hollow cylindrical region is removed such that the shape of the III nitride semiconductor single crystal is always keeps an axial symmetry that a center axis of the III nitride semiconductor single crystal is defined as a symmetric axis.

A method of sampling a multi-layered material and a micro-sampling tool are described. The sampling method includes penetrating a top surface of a material in a component of interest with a micro-cutting tool to a predetermined depth sufficient to include each layer of the multi-layered material and a portion of the base, without cutting through the full depth of the base, under-cutting from the depth of penetration through the base to define a micro-sample of the multi-layered material, and removing the micro-sample with each layer of the multi-layered material intact. The micro-sampler includes a cutting tool calibrated to cut to a depth no greater than 2 mm, and in some aspects, no greater than 200 microns into a multi-layered material, the material having a top surface and a metallic or ceramic base and a container for removing and storing a micro-sample cut from the material with each layer of the multi-layered material and a portion of the base intact.