A method for manufacturing a pattern structure includes preparing a wafer that has a plurality of fine patterns, generating a first trench by processing the wafer from a first surface to a first depth, and generating a second trench connected to the first trench by processing the wafer from a second surface which is opposite to the first surface to a second depth, thereby cutting the wafer.

A workpiece processing method is provided for processing a workpiece including a device region, a peripheral surplus region surrounding the device region, and key patterns being arranged on a top surface side in the peripheral surplus region so as to correspond to a plurality of planned dividing lines, the method including: a resin sheet sticking step of sticking a resin sheet to the top surface side of the workpiece, and transferring the key patterns onto the resin sheet; a peripheral surplus region removing step of dividing the peripheral surplus region from the workpiece, and peeling off the peripheral surplus region from the resin sheet; and a device region processing step of identifying a position of at least one planned dividing line by using, as marks, traces of the key patterns exposed in the peripheral surplus region removing step, and processing the device region along the plurality of planned dividing lines.

A wafer processing method for processing a wafer having devices on the front side is provided. The wafer processing method includes a back grinding step of grinding the wafer to form a recess and an annular reinforcing portion surrounding the recess on the back side of the wafer, and a dividing step of cutting the wafer along division lines formed on the front side of the wafer. In the back grinding step, a taper surface is formed between the bottom surface of the recess and the annular reinforcing portion. The taper surface is inclined with respect to a direction perpendicular to the bottom surface of the recess. In the dividing step, a cutting blade is lowered to start cutting at a position radially inside the outer circumference of the wafer and is subsequently raised to stop cutting at another position radially inside the outer circumference of the wafer.

A method for processing a plate-shaped workpiece having a division line and a metal member formed on the division line or in an area corresponding to the division line includes a holding step of holding the plate-shaped workpiece on a chuck table where the metal member is exposed, a first cutting step of cutting the plate-shaped workpiece along the division line by using a first cutting blade after performing the holding step, thereby forming a first cut groove dividing the metal member, and a second cutting step of cutting the plate-shaped workpiece along the first cut groove by using a second cutting blade after performing the first cutting step, thereby forming a second cut groove fully cutting the plate-shaped workpiece. The first cutting step includes the step of supplying a cutting fluid containing an organic acid and an oxidizing agent to the plate-shaped workpiece.

A wafer processing method includes: a holding step of holding a wafer on a chuck table through a dicing tape; and a dividing step of cutting the wafer along division lines by a cutting blade. In the dividing step, cleaning water including pure water mixed with carbon dioxide is supplied to the front surface of the wafer, and cutting water including pure water alone or pure water mixed with carbon dioxide in a concentration lower than that of the cleaning water is supplied to the cutting blade. During cutting, therefore, the cleaning water and the cutting water are always shielded by each other. Consequently, the cutting blade can be prevented from being corroded or excessively worn due to the cleaning water, and the cutting water can be prevented from contacting the front surface of the wafer to cause electrostatic discharge damage to the devices.

A cutting apparatus includes a blade changing unit demounting an old cutting blade from a blade mount and mounting a new cutting blade to the blade mount. The blade changing unit includes a blade holder for holding a support base of each cutting blade and a moving portion for moving the blade holder in the axial direction of a boss portion of the blade mount in the condition where each cutting blade is held by the blade holder, thereby mounting the new cutting blade to the boss portion or demounting the old cutting blade from the boss portion. The cutting apparatus further includes a control unit controlling the blade changing unit. The control unit measures a signal indicating a force applied to the moving portion in mounting or demounting, and determines the condition of the blade changing unit and blade mount according to the signal measured by the measuring portion.

A method of processing a plate-shaped workpiece that includes layered bodies containing metal which are formed in superposed relation to projected dicing lines includes the steps of holding the workpiece on a first holding table such that the layered bodies are exposed, thereafter, cutting the workpiece along the projected dicing lines with a cutting blade to form cut grooves that sever the layered bodies, thereafter, holding the workpiece on a second holding table such that a mask disposed in areas that are exclusive of the projected dicing lines is exposed, and thereafter, performing dry etching on the workpiece through the mask to sever the workpiece along the projected dicing lines. The step of cutting the workpiece includes the step of cutting the workpiece while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

Methods and apparatus for pre-treating semiconductor wafers before edge trimming to enhance wafer edge quality prior to thinning the semiconductor wafers from an initial thickness, and increasing yield post-thinning of the pre-treated, edge trimmed semiconductor wafers.

Edge trimming is performed on a wafer while a cleaning liquid is supplied to the center of a face side of the wafer and the wafer is rotated to form a film of the cleaning liquid that covers the face side of the wafer. The film of the cleaning liquid prevents the face side of the wafer from being dried, lowering the probability that swarf will be introduced into devices on the face side of the wafer. In addition, the consumption of the cleaning liquid can be reduced compared with a step of performing edge trimming on the wafer while supplying a curtain of cleaning liquid to the entire face side of the wafer.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of cutting the wafer by using a cutting apparatus to thereby divide the wafer into individual device chips, and a pickup step of blowing out air to push up each device chip and picking up each device chip from the polyester sheet.