Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a WARP value of 3.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.

A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×10.sup.10 atoms/cm.sup.2 and not more than 2000×10.sup.10 atoms/cm.sup.2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.

A sample preparation apparatus and method of preparing a rock sample using such an apparatus, as useful in connection with the digital numerical simulation of properties of the rock. The disclosed apparatus includes a fixably mounted diamond wire cutter. Three linear translation stages are coupled to a specimen holder. One of the translation stages moves the specimen in a direction parallel to the plane of the cutting wire. The other two translation stages move the specimen in different directions from one another, and when actuated together, advance the specimen into the wire for short distances in a direction out of the plane of the cutting wire. Short piecewise linear cuts are made in the specimen, to provide a sample of the desired shape with a small cross-section.

Semiconductor wafers are produced from a workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires tensioned between wire guide rollers and divided into wire groups, the wires moving in a running direction producing kerfs as wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups determined, and for each of the wire groups compensating movements of the wires of the wire group are induced as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.

Semiconductor wafers with improved geometry are produced from a workpiece by processing the workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires which are tensioned between wire guide rollers and move in a running direction; producing kerfs when the wires engage into the workpiece; determining a placement error of the kerfs; and inducing a compensating movement of the workpiece as a function of the determined placement error along a longitudinal axis of the workpiece during the feeding of the workpiece through the arrangement of wires.

Wafer shape parameters from prior runs of simultaneously slicing a plurality of wafers from a workpiece in a wire saw having a sawing wire tensioned between wire guide rolls are used to alter the temperature profile of fixed and a moveable bearings at the ends of at least one wire guide roll, resulting in wafers with low waviness.

A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed. The slurry sprayer includes a main body and a cover plate that is detachable from the main body for cleaning the slurry sprayer. In some embodiments, the slurry sprayer includes an adjustable support that allows the incline angle of the sprayer to be adjusted and allows the vertical and horizontal position of the slurry sprayer to be adjusted. In some embodiments, the slurry sprayer includes two feed openings to allow the slurry pressure to be more equalized across the slurry sprayer.

The present disclosure provides a method and a device for cutting a solar silicon wafer, and a storage medium, which relate to the technical field of crystalline silicon cutting and can solve a problem of high labor intensity of operators caused by repeated operation in solar silicon wafer cutting, improve production efficiency and reduce misoperation. A technical solution is specifically as follows: loading materials to be cut to a section cutter (101); adjusting a cutting wire mesh according to preset requirements, starting a cutting procedure when cutting conditions are met, and cutting the materials to be cut (102); generating prompt information for completed cutting after the cutting is completed (103); and unloading cut materials from the section cutter according to the prompt information for the completed cutting (104). The present disclosure is used for silicon wafer cutting.

Provided are a method for cutting silicon rod and an apparatus for diamond multi-wire cutting, the method for cutting silicon rod includes: using a cooling pipe to supply cutting fluid to the diamond wire, and using the diamond wire to cut the silicon rod, wherein the distance between the supply position of the cutting fluid and the periphery of the silicon rod is 10-20 mm; or adjusting the new wire running amount and/or feed speed at different positions of the crystal cross section during the cutting process.