The cutting method is a cutting method for cutting a workpiece using a wire tool, including: supplying a slurry containing abrasive grains having an electrical dielectric property to a region of the workpiece into which the wire tool cuts; generating an alternating electric field in a region between the wire tool and the workpiece; and running the wire tool along a direction in which the wire tool is drawn while the wire tool abuts on the workpiece.

A method and device for simulating a production duration of a silicon-wafer slicer, including: constructing a slicer simulating model, wherein the slicer simulating model includes process-step data of the slicer, and the process-step data include: a loading process step, a cutting process step, a discharging process step, a rinsing process step, a waiting process step, a broken-line replacing process step, a guide-pulley replacing process step, a home-roll replacing process step and a paying-off-wheel replacing process step; in the slicer simulating model, according to a predetermined rule, obtaining a process-step-to-be-executed datum; according to historical data, for the process-step-to-be-executed datum, assigning duration data that individually correspond to the process-step-to-be-executed data, wherein the historical data include: historical duration data that individually correspond to the process-step data of the slicer; and executing sequentially the process steps in the process-step-to-be-executed data, and obtaining a sum of the duration data of the process steps.

Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.

A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H—SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.

A method of manufacturing a hexagonal Group-III nitride semiconductor plate crystal using a crystal cutting wire. where the hexagonal semiconductor crystal has one principal face on one side and another principal face on an opposite side, and the hexagonal semiconductor crystal is cut by causing the crystal cutting wire to move so as to (i) divide the one principal face and the another principal face and (ii) satisfy conditions of Expressions (A) and (B):

25°<α≤90°  Expression (A); and

β=90°±5°  Expression (B) where α represents an angle formed by a c axis of the hexagonal Group-III nitride semiconductor crystal and a normal line of a crystal face cut out by the wire, and β represents an angle formed by a reference axis, which is obtained by perpendicularly projecting the c axis of the hexagonal Group-III nitride semiconductor crystal to the crystal face cut out by the wire, and a cutting direction.

Method for cutting crystal boules using diamond wire, wherein this boule is driven about a main axis, a cutting wire is held taut and driven through a temporary drum immobilising each boule in position with respect to the main axis throughout the entire cutting operation, this temporary drum being made by overmoulding a coating material on at least one boule bonded onto a sacrificial core, the cutting being followed by the slicing of cut rings from which are detached, particularly using heat, crystalline plates with parallel faces.

A method for manufacturing an ingot block in which an ingot of a silicon single crystal pulled up by a Czochralski process is cut and subjected to outer periphery grinding to manufacture an ingot block of the silicon single crystal, the method including: a step of measuring a radial center position of the ingot at one or more locations along a longitudinal direction of the ingot, a step of setting a reference position at which an offset amount of the measured radial center position of the ingot is equal to or less than a predetermined eccentricity amount, a step of cutting the ingot into the ingot blocks based on the set reference position, and a step of performing outer periphery grinding on each of the cut ingot blocks.

A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

A method for slicing an ingot, including: forming a wire row by a wire spirally wound between a plurality of wire guides and configured to travel in an axial direction; and pressing an ingot against the wire row while supplying a contact portion between the ingot and the wire with a slurry from a nozzle, thereby slicing the ingot into wafers. The slurry is supplied such that slurries whose temperatures are separately controlled by two or more lines of heat exchangers are respectively supplied from two or more sections of the nozzle which are orthogonal to a travelling direction of the wire row. Consequently, a wire saw and a method for slicing an ingot are provided which enable separate control of wafer shapes depending on ingot-slicing positions.

A metal wire containing tungsten is provided. A tungsten content of the metal wire is at least 90 wt %. A tensile strength of the metal wire is at least 4000 MPa. An elastic modulus of the metal wire is at least 350 GPa and at most 450 GPa. A diameter of the metal wire is at most 60 μm. An average crystal grain size of the metal wire in a cross-section orthogonal to an axis of the metal wire is at most 0.20 μm.