The present disclosure relates to an alloy wire rod and a preparation method and application thereof. The alloy wire rod is made of a tungsten alloy, and the tungsten alloy contains tungsten and an oxide of cerium. The alloy wire rod has a wire diameter of equal to or less than 100 m; and the alloy wire rod has a tensile strength of greater than 3,800 MPa. The wire diameter of the alloy wire rod is equal to or less than 60 m; the diameter of a push-pull core wire of the alloy wire rod is less than 350 m; the elastic ultimate strength of the alloy wire rod is greater than 2,500 MPa; and the tensile strength of the alloy wire is greater than 4,200 MPa. In the present disclosure, the alloy wire rod having ultra-high strength and good toughness is obtained by doping an oxide of cerium.

A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4HSiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the.top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8 relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within 5 relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.

A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around multiple grooved rollers, the method including feeding a workpiece to the wire row for slicing while allowing the fixed abrasive grain wire to reciprocatively travel in an axial direction thereof, thereby slicing the workpiece at multiple positions aligned in an axial direction of the workpiece simultaneously. The method includes: supplying a coolant for workpiece slicing onto the wire row when the workpiece is sliced with the fixed abrasive grain wire; and supplying a coolant for workpiece drawing, which differs from and has a higher viscosity than the coolant for workpiece slicing, onto the wire row when the workpiece is drawn out from the wire row after the slicing of the workpiece.

According to the present invention, there is provided an ingot clamp including: a clamp body configured to have a holder mounting groove and a cavity; a fixing part configured to support and fix one side of an ingot holder inserted in the holder mounting groove; a movable fixing part disposed in the cavity and the holder mounting groove and configured to press and fix the other side of the ingot holder; a cover assembly coupled with the clamp body and configured to cover the cavity; and an air supply part coupled with the cover assembly and configured to supply air into the cavity.

A substantial reduction in scrap produced by an interrupted process for the sawing of a workpiece into a multiplicity of wafers with a wire saw caused by wire breakage, is made possible by detecting the exact or approximate position of the wire break, repairing or replacing the sawing wire, and rethreading the sawing wire web into the saw kerfs, while excluding the kerf in which breakage occurred.

The present subject matter discloses a longitudinal silicon ingot slicing apparatus for lateral slicing of cylindrical ingot to maximize resulting chips yield as compared to the conventional transverse slicing of ingot. The resulting rectangular wafers made from lateral slicing of ingot maximizes yield as by the lateral slicing of ingot, overall chips per wafer ratio gets increased as compared to transversal cutting while the said apparatus and method decreases waste due to conflict between chip and wafer geometry. The novel apparatus of longitudinal slicing of cylindrical ingot is comprising of a wire wounded around a wire reels and a plurality of grooved rollers to form a wire raw to slice the cylindrical silicon ingot. A motors are connected with the wire reels and with at least one grooved roller to slide the wire row back and forth to cut the cylindrical ingot. A work feed table is also configured along with the JIG fixture that holds the cylindrical ingot as well as align the wire raw during slicing.

A saw wire includes a metal wire containing rhenium-tungsten alloy. A rhenium content of the metal wire is at least 0.1 wt % and at most 10 wt % with respect to a total weight of rhenium and tungsten, an elastic modulus of the metal wire is at least 350 GPa and at most 450 GPa, a tensile strength of the metal wire is at least 3500 MPa, and a diameter of the metal wire is at most 60 m.

A method of sampling a multi-layered material and a micro-sampling tool are described. The sampling method includes penetrating a top surface of a material in a component of interest with a micro-cutting tool to a predetermined depth sufficient to include each layer of the multi-layered material and a portion of the base, without cutting through the full depth of the base, under-cutting from the depth of penetration through the base to define a micro-sample of the multi-layered material, and removing the micro-sample with each layer of the multi-layered material intact. The micro-sampler includes a cutting tool calibrated to cut to a depth no greater than 2 mm, and in some aspects, no greater than 200 microns into a multi-layered material, the material having a top surface and a metallic or ceramic base and a container for removing and storing a micro-sample cut from the material with each layer of the multi-layered material and a portion of the base intact.

A shaped crystalline ingot for an ion cleaving process has a major surface that is substantially planar, a first side face that is substantially planar along a first direction orthogonal to the major surface, and a second side face that is substantially planar along a second direction orthogonal to the major surface. The ion cleaving process is a process in which ions are implanted into the shaped crystalline ingot to form a cleave plane that separates a substrate comprising the major surface from the shaped crystalline ingot.

A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed. The slurry sprayer includes a main body and a cover plate that is detachable from the main body for cleaning the slurry sprayer. In some embodiments, the slurry sprayer includes an adjustable support that allows the incline angle of the sprayer to be adjusted and allows the vertical and horizontal position of the slurry sprayer to be adjusted. In some embodiments, the slurry sprayer includes two feed openings to allow the slurry pressure to be more equalized across the slurry sprayer.