An EUV light generation system includes a prepulse laser device outputting prepulse laser light to be radiated to a target supplied into a chamber; a main pulse laser device outputting main pulse laser light to be radiated to a diffusion target generated by the radiation of the prepulse laser light; a first actuator adjusting an irradiation position of the prepulse laser light; a second actuator adjusting an irradiation position of the main pulse laser light; an EUV sensor detecting EUV energy; a laser energy sensor detecting laser energy of the main pulse laser light; a target sensor imaging the diffusion target; and a controller controlling, after controlling the first actuator based on a characteristic value of the diffusion target calculated from an image of the diffusion target, the second actuator so that a ratio of the EUV energy to the laser energy detected by the laser energy sensor becomes large.

An extreme ultraviolet light generation apparatus includes a chamber in which a target substance supplied to a plasma generation region is irradiated with laser light to generate extreme ultraviolet light, a laser device generating the laser light, a target supply unit supplying a droplet of the target substance toward the plasma generation region, a target collection unit collecting the target substance which has not been irradiated with the laser light, a first gas supply unit supplying a buffer gas into the chamber, and a processor controlling the first gas supply unit so that, in a period of the droplet being output, a first flow rate of the buffer gas to be supplied from the first gas supply unit in at least a part of a first period is smaller than a second flow rate of the buffer gas to be supplied from the first gas supply unit in a second period.

An EUV light generation apparatus includes a chamber; a target supply device configured to supply a target into the chamber; a first pulse laser device configured to irradiate the target with first pulse laser light in a plasma generation region in the chamber; an EUV light concentrating mirror arranged in the chamber and configured to reflect EUV light, radiated from the plasma generation region, toward an external apparatus; and a second pulse laser device configured to irradiate a diffusion matter, diffused by the irradiation with the first pulse laser light, with second pulse laser light having an irradiation spot diameter larger than an irradiation spot diameter of the first pulse laser light. An intensity of the EUV light generated by the irradiation with the second pulse laser light is smaller than an intensity of the EUV light generated by the irradiation with the first pulse laser light.

A droplet generator may form a stable chain of droplets. The droplet generator may enhance the stability of the chain of droplets using a nozzle, a multi-stage skimmer, and/or gas-distribution ring. The nozzle may include a nozzle orifice and filter which may control a target-material flow forming a jet and subsequently coalescing into droplets. The skimmer may include apertures and/or capillaries which are arranged axially along the path of the chain of droplets to skim off a flow of ambient gas. The gas-distribution ring may include a set of holes for even gas distribution, improving the flow of ambient gas within an intermediate chamber. The droplet generator may also include gas, electrical, pressure-sensor, and/or temperature-sensor interfaces. The droplet generator may also include clamps to connect the intermediate chamber with the nozzle and skimmer.

The present invention relates to an apparatus for supplying a liquid target material to a radiation source, comprising a reservoir system including a reservoir (410) configured to be connected to an ejection system (450) via an outlet (410a) of the reservoir and a pressurizing system to pressurize solid target material in the reservoir, wherein the apparatus further comprises a heating system (440) arranged between the reservoir and the ejection system to liquify the solid target material after being pressurized in the reservoir, and wherein the pressurizing system is configured to provide a pressure to the solid target material in the reservoir in order to extrude the solid target material through the outlet such that the liquid target material entering the ejection system is at a pressure of at least (200) bar.

An extreme ultraviolet light generation apparatus includes a target supply unit, a target passage detection device, a delay circuit, a laser device, a target image capturing device, and a processor. Here, the processor controls the vibrating element to provide irregular intervals between droplet targets adjacent to each other; generates integrated image data by integrating plural pieces of image data imaged at different times; specifies a position, in the integrated image data, of the droplet target most emphasized in the integrated image data; and sets a delay time based on a distance from a position of the most emphasized droplet target to a second detection position.

An EUV light generation system includes a prepulse laser device outputting prepulse laser light to be radiated to a target supplied into a chamber; a main pulse laser device outputting main pulse laser light to be radiated to a diffusion target generated by the radiation of the prepulse laser light; a first actuator adjusting an irradiation position of the prepulse laser light; a second actuator adjusting an irradiation position of the main pulse laser light; an EUV sensor detecting EUV energy; a laser energy sensor detecting laser energy of the main pulse laser light; a target sensor imaging the diffusion target; and a controller controlling, after controlling the first actuator based on a characteristic value of the diffusion target calculated from an image of the diffusion target, the second actuator so that a ratio of the EUV energy to the laser energy detected by the laser energy sensor becomes large.

An extreme ultraviolet light generation system, generating plasma by irradiating a target with pulse laser light and generate extreme ultraviolet light, includes a chamber, a target supply unit supplying the target into the chamber, a target passage detection device detecting the target passing through a predetermined region, a laser device radiating the pulse laser light toward the target having passed through the predetermined region, and a processor. The target passage detection device includes a light source irradiating the predetermined region with light, and a sensor receiving the light and outputting a signal corresponding to a received light amount of the light. The processor acquires, from the signal, a passage timing at which the target is detected and a time width during which the target is detected, and determines irradiation timing of the laser device for irradiating with the pulse laser light based on the passage timing and the time width.

An extreme ultraviolet light generation apparatus generating extreme ultraviolet light by irradiating a droplet with laser light includes a tank storing a target substance in a liquid state; a nozzle outputting the target substance stored in the tank; a piezoelectric element applying vibration reflecting an electric signal to the target substance to be output from the nozzle to generate the droplet of the target substance; a first sensor measuring a passage interval of the droplets output from the nozzle; a second sensor measuring a parameter related to the droplet; and a processor setting a prohibited band of a duty of the electric signal based on data in which the duty and the parameter at the duty are associated with each other, and setting the duty of the electric signal to be applied to the piezoelectric element while avoiding the prohibited band.

An EUV light generation apparatus is configured to generate EUV light by irradiating a target output into a chamber with laser light. Here, the EUV light generation apparatus includes a light concentrating unit configured to concentrate the laser light on the target, an angle adjustment mirror configured to adjust an incident angle of the laser light on the light concentrating unit, a position adjustment mirror configured to adjust an incident position of the laser light on the light concentrating unit, a beam monitor configured to measure a parameter related to variation in the incident position, and a processor configured to perform control of adjustment by the position adjustment mirror based on a measurement value of the parameter when performing adjustment by the angle adjustment mirror.