Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and/or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

A control apparatus for an optical apparatus including a light source apparatus according to the present disclosure is configured to determine a mode to be executed from among a plurality of modes and control the optical apparatus accordingly. The plurality of modes include a first mode in which the light source apparatus irradiates laser light onto a molten target material to generate illumination light, and the optical apparatus illuminates an object using the illumination light, and a second mode in which the light source apparatus irradiates laser light onto at least one of a holding unit of the target material or the target material in a solid state to change the target material from the solid state to a molten state.

A circulation mechanism includes a storage section, a supply pipe, a collection pipe, a circulation drive section, and a protective member. The storage section accommodates liquid metal. The supply pipe supplies the liquid metal accommodated in the storage section to a target mechanism. The collection pipe is communicated with the storage section and collects the liquid metal that has been drained away from the target mechanism into the storage section. The circulation drive section allows the liquid metal accommodated in the storage section to move to the supply pipe, and thus circulates the liquid metal to and from the target mechanism. The protective member is disposed to cover a portion of an inner wall of the collection pipe, the portion corresponding to a position at which the liquid metal flowing through the collection pipe collides with the liquid metal accommodated in the storage section.

The invention relates to plasma source comprising a target material to produce the plasma emitting EUV radiation. The target material comprises a Li-based alloy with at least one further element selected from the group consisting of Ag, Au, Bi, Ba, Sr. The alloy is configured to increase the density of the target material by more than three times compared to the density of Li. As a result, compared with the Li target, the velocity of the droplet fraction of debris particles may be sharply reduced, which makes it possible to control the direction of its exit from the plasma due to the high velocity of the target. The plasma source is preferably a laser-produced plasma light source with a fast rotating target (at least 100 m/s). The target material may allow the creation of compact low-debris EUV light sources with high spectral brightness designed for a wide range of applications.

A tin (Sn) auto-filling device and system provided to provide new liquid Sn to an inner sidewall surface of a rotation crucible. A laser is exposed to the liquid Sn at the inner sidewall surface of the rotation crucible to generate extreme-ultraviolet-light (EUV) that is utilized to process workpieces within a semiconductor manufacturing plant (FAB). The auto-filling device automatically refills as the liquid Sn at the inner sidewall surface of the rotation crucible is consumed due to the liquid Sn at the inner sidewall surface of the rotation crucible being exposed to the laser.

According to an embodiment of the present technology, there is provided a light source apparatus that converts a liquid raw material into plasma and extracts radiation by using irradiation with an energy beam, the light source apparatus including: a first member that includes a first region to which the liquid raw material has adhered with a first film thickness; and a beam source that irradiates the first region with the energy beam at a first focusing density and irradiates a first space with the energy beam at a second focusing density, the first space being a space in which the liquid raw material is diffused by the irradiation with the energy beam at the first focusing density, the first focusing density being a focusing density at which the energy beam does not reach the first member when the first region is irradiated with the energy beam.

A tin (Sn) auto-filling device and system provided to provide new liquid Sn to an inner sidewall surface of a rotation crucible. A laser is exposed to the liquid Sn at the inner sidewall surface of the rotation crucible to generate extreme-ultraviolet-light (EUV) that is utilized to process workpieces within a semiconductor manufacturing plant (FAB). The auto-filling device automatically refills as the liquid Sn at the inner sidewall surface of the rotation crucible is consumed due to the liquid Sn at the inner sidewall surface of the rotation crucible being exposed to the laser.