An extreme ultraviolet light generation chamber device includes a chamber generating, at an internal space thereof, extreme ultraviolet light by irradiating a droplet target of tin with laser light to turn the droplet target into plasma; a target supply unit supplying the droplet target into the internal space; an extreme ultraviolet light concentrating mirror arranged in the internal space and including a reflection surface which reflects the extreme ultraviolet light; a first etching gas supply unit supplying an etching gas containing a hydrogen gas to the reflection surface having a flow velocity at the reflection surface variable; a data generation unit generating data reflecting reflectance of the extreme ultraviolet concentrating mirror; and a processor controlling the first etching gas supply unit to decrease the flow velocity when the data indicates that an amount of decrease in the reflectance is equal to or more than a reference value.

A modular laser-produced plasma X-ray system includes a liquid metal flow system enclosed within a low-pressure chamber, the flow system including a liquid metal, wherein in at least one location on the liquid metal forms a metal target directly illuminated by laser pulses, a circulation pump within the liquid metal flow system for circulating the liquid metal, a laser pulse emitter configured to transmit laser pulses into the chamber via a laser window, focusing optics, located between the emitter and the metal target, the focusing optics directing the laser pulses to strike the metal target at a target location to form X-ray pulses, and an X-ray window positioned within the chamber to enable the X-ray pulses to exit the chamber.

An extreme ultraviolet light generator includes a collector including a first focus and a second focus, a droplet feeder configured to provide a source droplet toward the first focus of the collector, a laser generator configured to irradiate a laser toward the first focus of the collector, an airflow controller between the first focus and the second focus of the collector, the airflow controller having a ring shape, and the airflow controller including at least one slit, and a first part and a second part hinged to each other, and a control gas feeder configured to provide a control gas towards the at least one slit of the airflow controller.

An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

A control apparatus for an optical apparatus including a light source apparatus according to the present disclosure is configured to determine a mode to be executed from among a plurality of modes and control the optical apparatus accordingly. The plurality of modes include a first mode in which the light source apparatus irradiates laser light onto a molten target material to generate illumination light, and the optical apparatus illuminates an object using the illumination light, and a second mode in which the light source apparatus irradiates laser light onto at least one of a holding unit of the target material or the target material in a solid state to change the target material from the solid state to a molten state.

The invention relates to plasma source comprising a target material to produce the plasma emitting EUV radiation. The target material comprises a Li-based alloy with at least one further element selected from the group consisting of Ag, Au, Bi, Ba, Sr. The alloy is configured to increase the density of the target material by more than three times compared to the density of Li. As a result, compared with the Li target, the velocity of the droplet fraction of debris particles may be sharply reduced, which makes it possible to control the direction of its exit from the plasma due to the high velocity of the target. The plasma source is preferably a laser-produced plasma light source with a fast rotating target (at least 100 m/s). The target material may allow the creation of compact low-debris EUV light sources with high spectral brightness designed for a wide range of applications.

An extreme ultraviolet light generation apparatus includes a chamber in which a target substance supplied to a plasma generation region is irradiated with laser light to generate extreme ultraviolet light, a laser device generating the laser light, a target supply unit supplying a droplet of the target substance toward the plasma generation region, a target collection unit collecting the target substance which has not been irradiated with the laser light, a first gas supply unit supplying a buffer gas into the chamber, and a processor controlling the first gas supply unit so that, in a period of the droplet being output, a first flow rate of the buffer gas to be supplied from the first gas supply unit in at least a part of a first period is smaller than a second flow rate of the buffer gas to be supplied from the first gas supply unit in a second period.

An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

An extreme ultraviolet (EUV) source includes a source vessel enclosing at least in part a volume in which, when in use, EUV light is transmitted by a collector from a primary focus to an intermediate focus along an optical axis: a shaft, the shaft having a length extending from a first end to a second end of the shaft.Math.the shaft including a passage, the passage extending at least partially along the length of the shaft, the first end of the shaft attached to an interior surface of the source vessel and the second end positioned inside the source vessel; a head (130) connected to the second end of the shaft, the head intersecting the optical axis, the head having an exposed surface (134) exposed to the primary focus, the exposed surface having one or more apertures therein, the one or more apertures being in fluid communication with the passage.