Disclosed is a system for and method of performing target metrology in an extreme ultraviolet light source in which illumination for a target imaging/detection system is selected to have a center wavelength less than 400 nm. In some embodiments the illumination is additionally selected to have a line width of at least 4 nm. In some embodiments illumination is obtained as a second harmonic of a Ti:sapphire laser or as a harmonic of an Nd:YAG laser.

A light source system, preferably including one or more electron inputs, splitters, recombiners, and/or electron outputs, and optionally including one or more accelerator modules, input transports, radiator modules, and/or output transports. The system can optionally include one or more ancillary elements (e.g., electron optics elements). A method of operation, preferably including operating in a normal mode and/or operating in a backup mode.

A beam diaphragm includes a diaphragm opening for allowing passage of a first portion of laser beam, a deflector for deflecting a second portion of the laser beam not allowed to pass through the diaphragm opening, a reflector for reflecting the second portion of the laser beam deflected by the deflector, and a sensor for detecting a reflex of the second portion of the laser beam.

The present invention relates to an on-axis type EUV light source device with a target material supply channel, including: a rotational disk having a rotational disk rim which melts a target material for generating EUV light through plasma reactions; a plurality of rotational disk ribs supporting the rotational disk rim so that EUV light penetrates relative to a predetermined area among a light focusing region; and a supply channel formed on each rotational disk rib to supply the target material to the rotational disk rim, wherein the rotational disk ribs supporting the rotational disk rim are configured to allow EUV light to penetrate relative to a predetermined area of a light focusing region through a collector mirror.

Disclosed is an apparatus and a method in which multiple, e.g., two or more pulses from a single laser source are applied to source material prior to application of a main ionizing pulse in which the multiple pulses are generated by a common laser source. The first pulse is directed towards the source material when the source material is at a first position and the second pulse is directed towards the source material when the source material is at a second position.

A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.

A modular laser-produced plasma X-ray system includes a liquid metal flow system enclosed within a low-pressure chamber, the flow system including a liquid metal, wherein in at least one location on the liquid metal forms a metal target directly illuminated by laser pulses, a circulation pump within the liquid metal flow system for circulating the liquid metal, a laser pulse emitter configured to transmit laser pulses into the chamber via a laser window, focusing optics, located between the emitter and the metal target, the focusing optics directing the laser pulses to strike the metal target at a target location to form X-ray pulses, and an X-ray window positioned within the chamber to enable the X-ray pulses to exit the chamber.

Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.

Disclosed is an apparatus and a method in which multiple, e.g., two or more pulses from a single laser source are applied to source material prior to application of a main ionizing pulse in which the multiple pulses are generated by a common laser source. The first pulse is directed towards the source material when the source material is at a first position and the second pulse is directed towards the source material when the source material is at a second position.

Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.