Patent classifications
B29L2031/3406
MANUFACTURING METHOD OF MOLDED PRODUCT AND MOLDED PRODUCT
Provided is a molded product manufacturing method, including attachment of attaching a partially exposed member that extends from inside a sealed portion in the molded product to be exposed to outside to a sealing target member that is to be sealed inside the sealed portion in the molded product; injecting of inserting the sealing target member having the partially exposed member attached thereto in a die and injecting a sealing material into the die; adjustment of, in a first time period during which the sealing material is injected, holding the partially exposed member at a position differing from a final position in the molded product and adjusting a flow of the sealing material with an adjusting member attached to the partially exposed member; and hardening the sealing material after the first time period.
Motor bobbin
Provided is a motor bobbin around which a winding wire is wound, said motor bobbin comprising insulating paper and a resin molded body. The insulating paper and the resin molded body are coupled and fixed together without using an adhesive agent. Surfaces of the insulating paper which are in contact with the resin molded body are configured using aramid paper comprising an aramid fibrid and aramid short fibers. Resin is melt extruded and thermal-fusion bonded upon the aramid paper comprising the aramid fibrid and the aramid short fibers, and the surfaces configured from the aramid paper are surface treated to obtain the insulating paper. The motor bobbin is obtained by bringing melted portions of the resin molded body into contact with the top of the aramid paper.
MOLD DEVICE
According to one embodiment, a mold device includes a first mold. The first mold includes a substrate clamping surface, a cavity, a suction part, a vent, first and second intermediate cavities and an opening/closing part. The substrate clamping surface contacts a surface of a processing substrate. The cavity is recessed from the substrate clamping surface. The suction part is recessed from the substrate clamping surface. The vent is provided on a path between the cavity and the suction part, and is recessed from the substrate clamping surface to a vent depth. The first intermediate cavity is provided between the vent and the suction part, and is recessed from the substrate clamping surface. The second intermediate cavity is provided between the first intermediate cavity and the suction part, and is recessed from the substrate clamping surface to a second intermediate cavity depth. The opening/closing part opens and closes the path.
Composite heat sink structures
Composite heat sink structures and methods of fabrication are provided, with the composite heat sink structures including: a thermally conductive base having a main heat transfer surface to couple to, for instance, at least one electronic component to be cooled; a compressible, continuous sealing member; and a sealing member retainer compressing the compressible, continuous sealing member against the thermally conductive base; and an in situ molded member. The in situ molded member is molded over and affixed to the thermally conductive base, and is molded over and secures in place the sealing member retainer. A coolant-carrying compartment resides between the thermally conductive base and the in situ molded member, and a coolant inlet and outlet are provided in fluid communication with the coolant-carrying compartment to facilitate liquid coolant flow through the compartment.
COMPOSITION FOR FORMING UNDERLAYER FILM FOR IMPRINTING, METHOD FOR PRODUCING COMPOSITION FOR FORMING UNDERLAYER FILM, KIT, PATTERN PRODUCING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Provided are: a composition for forming an underlayer film for imprinting, which contains a high-molecular-weight compound having a polymerizable group, a chelating agent, and a solvent, and a method for producing the same; a kit including the composition for forming an underlayer film; a pattern producing method using the composition for forming an underlayer film; and a method for manufacturing a semiconductor element, which includes the pattern producing method as a step.
Mould Half and Mould Method for Transfer Moulding Encapsulating Electronic Components Mounted on a Carrier Including a Dual Support Surface and a Method for Using Such
The present invention relates to a mould half for a mould for transfer moulding encapsulating electronic components mounted on a carrier, where the mould part to support the carrier has a contact surface that includes a primary carrier support surface and a the primary carrier support surface surrounding secondary surface, which surrounding secondary surface is supported by a drive for height adjustment of the secondary surface relative to the height of the primary carrier support surface. Such mould half may be used for transfer moulding of electronic components while relatively easy providing a levelled support for the carrier and compensating for any thickness variations in the carrier. The invention also provides a mould with at least two mould parts and a method for transfer moulding encapsulating electronic components mounted on a carrier using such a mould.
METHOD FOR PRODUCING A MULTILAYER BODY AND A MULTILAYER BODY
A method for producing a multilayer body and a multilayer body, wherein the method includes: providing a single-layered or multi-layered substrate with a first surface and a second surface, providing one or more sensor films which each have at least one sensor area and have a first surface and a second surface facing away from the first surface, applying the one or more sensor films to the second surface of the substrate such that the first surface of the respective sensor film rests on the second surface of the substrate at least in areas, thermoforming a series of layers comprising the substrate and the one or more sensor films applied to the second surface of the substrate such that, during the thermoforming, on the first surface of the substrate a surface relief is formed which is determined by the shaping, of one or more of the one or more sensor films.
Method of manufacturing semiconductor device, semiconductor device, and power conversion device
A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.
Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device
According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
Release film
A release film satisfies formulas (I) and (II) when S1 (%) represents the maximum dimensional change rate between 30° C. and 150° C. when the temperature is raised from 30° C. to 200° C. at a rate of 10° C./min, T1 (° C.) represents the temperature at which S1 is obtained, and S0 (%) represents the dimensional change rate at 40° C. The surfaces may have a surface free energy Sa (mN/mm) at 25° C., surface free energy Sb (mN/mm) after having been subjected to a heat treatment at 180° C. for 3 minutes, and surface free energy Sc (mN/mm) after having been stretched by 50% at 180° C. that satisfy formulas (III) and (IV).
0≤S1≤1.5 Formula (I):
0≤|S1−S0|/(T1−40)≤0.050 Formula (II):
0≤|Sa−Sb|≤15 Formula (III):
0≤|Sa−Sc|≤15 Formula (IV):