A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TS.sub.TD/TS.sub.LD, which is calculated from strength TS.sub.TD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TS.sub.LD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

There is provided an Ag-coated material and its related technique, including a base material and an Ag film on the base material, the Ag film including alternately laminated at least three Ag layers with average crystal grain sizes different by three times or more.

In an embodiment, a device includes a substrate having a thickness, wherein the thickness is a function of energy dissipation of a particle. In an embodiment, the device includes a thermal layer, formed on the substrate, of a first material that exhibits at least a threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates, and wherein any intervening material exhibits at least a second threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates.

An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.

Disclosures of the present invention mainly describe an alloy for making trace wires of a touch panel. The alloy consists of a first clapping layer, a copper layer, and a second clapping layer. By applying the alloy as the trace wires of the touch panel, feather-like microstructures are effectively prevented from forming between the trace wires and sensor units of the touch panel. On the other hand, because the alloy is able to completely defense the corrosion attack coming from HNO.sub.3-based etchant, the trace wires made of the alloy exhibits an outstanding corrosion resistant during the patterning process of the AgNW-made sensor units. Therefore, during patterning the AgNW-made sensor units, the trace wires can have a large processing window, such that the touch panel is hence able to have a good manufacturing yield rate and possesses an outstanding reliability.

The present invention relates, generally, to a component containing a composite of at least two layers that are connected to each other, in which the first layer comprises a hole and the second layer has a thickness in the range of 1 to 50 m. The first and second layers each contain at least one metal and compositions of the first and second layers are different. Further objects of the present invention include a method for producing a component containing at least two layers that are connected to each other and have the aforementioned features, a method for producing a component containing at least three layers that are connected to each other and have the aforementioned features, as well as a component that is obtained by one of the aforementioned methods and a device containing at least one of the aforementioned components for use in a living body.

A coil component includes a body having a volume of 2.4 mm.sup.3 or less and including at least one coil member embedded therein, and first and second external electrodes partially or entirely formed on first and second surfaces of the body opposing each other, respectively, wherein the product of inductance Ls (H) and S/l (mm) is 0.45 (H.Math.mm) or more to 0.75 (H.Math.mm) or less in which S (mm.sup.2) is an area of regions of the first and second external electrodes disposed on the first and second surfaces of the body, and 1 (mm) is a minimum spaced distance between the first and second external electrodes formed on the first and second surfaces of the body.

A silver-plated product is produced by forming a surface layer of silver on a base material by electroplating at a liquid temperature of 10 to 35 C. and a current density of 3 to 15 A/dm.sup.2 in a silver plating solution so as to satisfy (32.6x300)y(32.6x+200) assuming that a product of a concentration of potassium cyanide in the silver plating solution and a current density is y (g.Math.A/L.Math.dm.sup.2) and that a liquid temperature of the silver plating solution is x ( C.), the silver plating solution containing 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium.

An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.

A plated wire rod material according to the present disclosure contains a substrate containing aluminum or an aluminum alloy, and a surface treatment coat including one or more metal layers and covering the substrate. Of the one or more metal layers, an undermost metal layer which is a metal layer formed on the substrate includes nickel, a nickel alloy, cobalt or a cobalt alloy. A mixed layer containing a metal component in the substrate, a metal component in the surface treatment coat and an oxygen component is present at an interface between the substrate and the surface treatment coat.