According to various embodiments of the present disclosure, a metal unit may include: a core metal layer that is mainly composed of iron (Fe); and an outer layer formed on at least one face of the core metal layer, and bonded to solder so as to be attached to a printed circuit board. The metal unit and an electronic device including the same may be variously implemented according to embodiments.

A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 m in thickness, and the Cu surface layer is 0.0005 to 0.0070 m in thickness.

A coated substrate includes a substrate, a zirconium-containing layer disposed over the substrate, and one or more copper alloy layers disposed over the substrate. Variations include coated substrate with a single copper alloy layer, alternating copper layers, or a combined copper alloy/zirconium-containing layer.

The present invention relates to an electrolyte for deposition of hard silver layers, wherein the element bismuth is alloyed to the silver. The invention also relates to a method for deposition of a corresponding silver-bismuth alloy from an electrolyte according to the invention and to a correspondingly deposited layer.

A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/m or more and 1000% by mass/m or less.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

Providing a terminal material for connectors provided with a base material in which at least a surface layer is made of copper or copper alloy, a nickel-plating layer made of nickel or nickel alloy coating a surface of the base material, and a silver-nickel alloy plating layer formed on at least a part of the nickel-plating layer, the silver-nickel alloy plating layer having a film thickness of 0.5 m to 20 m inclusive, a nickel content of 0.03 at % to 1.20 at % inclusive, and an average crystal grain size of 10 nm to 150 nm inclusive, to improve abrasion resistance and heat resistance.

A plated product includes a component and an overall layer plated on a surface of the component. The overall layer includes a copper layer, a nickel layer, a nickel-tungsten layer, an inner golden layer, a palladium layer, an outer golden layer and a rhodium-ruthenium layer. The copper layer is plated on a surface of the component. The nickel layer, the nickel-tungsten layer, the inner golden layer, the palladium layer, the outer golden layer and the rhodium-ruthenium layer are plated on a surface of the copper layer in sequence.

A self-aligned tunable metamaterial is formed as a wire mesh. Self-aligned channel grids are formed in layers in a silicon substrate using deep trench formation and a high-temperature anneal. Vertical wells at the channels may also be etched. This may result in a three-dimensional mesh grid of metal and other material. In another embodiment, metallic beads are deposited at each intersection of the mesh grid, the grid is encased in a rigid medium, and the mesh grid is removed to form an artificial nanocrystal.

A silver-plated product is produced by forming a surface layer of silver on a base material by electroplating at a liquid temperature of 10 to 35 C. and a current density of 3 to 15 A/dm.sup.2 in a silver plating solution so as to satisfy (32.6x300)y(32.6x+200) assuming that a product of a concentration of potassium cyanide in the silver plating solution and a current density is y (g.Math.A/L.Math.dm.sup.2) and that a liquid temperature of the silver plating solution is x ( C.), the silver plating solution containing 80 to 110 g/L of silver, 70 to 160 g/L of potassium cyanide and 55 to 70 mg/L of selenium.