A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TS.sub.TD/TS.sub.LD, which is calculated from strength TS.sub.TD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TS.sub.LD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.

A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Coated articles and methods for applying coatings are described. In some cases, the coating can exhibit desirable properties and characteristics such as durability, corrosion resistance, and high conductivity. The articles may be coated, for example, using an electrodeposition process.

A pipe material used as a discharge electrode of a spark plug for an internal combustion engine comprises an outer layer made of a Ni-based alloy, an inner layer made of a Pt-based alloy provided inside the outer layer, and an intermediate layer provided between the outer layer and the inner layer.

A process for producing a metallic foam body, having a substrate made of at least one metal or metal alloy A and a layer of a metal or metal alloy B. The metal or metal alloy A and the metal or metal alloy B are selected from a group consisting of Ni, Cr, Co, Cu, Ag, and any alloy thereof and are different. The process includes providing a porous organic polymer foam. The process also includes depositing at least one first metal or metal alloy A on the porous organic polymer foam. The process further includes burning off the porous organic polymer foam to obtain a metallic foam body substrate. The process yet further includes depositing by electroplating a metallic layer of a metal or metal alloy B at least on a part of the surface of the metallic foam body substrate.

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

This seal ring (1) is made of a clad material in which a base material layer (10) and a brazing filler metal layer (11) arranged on a first surface (10b) of the base material layer are bonded to each other, and a side brazing filler metal portion (11f) of the brazing filler metal layer covering a side surface (10c) of the base material layer is removed.