A method for manufacturing a discontinuous vacuum-metalized thin film includes the following steps: step 1: coating a corona surface of a flexible thin film (1) with a longitudinal discontinuous stripping layer; step 2: coating the corona surface and the stripping layer with a metal layer (3); and step 3: removing the stripping layer and the metal layer (3) on the stripping layer to obtain a discontinuous vacuum-metalized thin film. A method for manufacturing a discontinuous vacuum-metalized wire, a discontinuous vacuum-metalized thin film and a discontinuous vacuum-metalized wire are further disclosed.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A thermal radiation element includes a substrate, made of a semiconductor, having a first principal plane and a second principal plane, a first conductor layer and a second conductor layer provided on the first principal plane and the second principal plane, respectively, and an electrode pair provided in an outer edge region of the first conductor layer.

To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.

The purpose of the present invention is to provide a palladium plating solution and a plating method for improving a bath stability of a palladium plating, without decreasing a deposition property of the palladium plating. A palladium plating solution for improving a bath stability, without decreasing a deposition property, comprising: an aqueous palladium compound: one or more complexing agent containing a compound having at least an ethylenediamine or a propylenediamine skeleton; a formic acid or a formate; and a sulfur compound, wherein the palladium plating solution is having two or more sulfide groups in a molecule of the sulfur compound.

A photosensitive electrically conductive structure includes: a substrate; a releasing photosensitizing resin layer disposed on the substrate; a nano silver layer disposed on the releasing photosensitizing resin layer; and a photosensitive electrically conductive layer disposed on an edge of the nano silver layer. A visible region is defined in the photosensitive electrically conductive structure where the nano silver layer is not covered by the photosensitive electrically conductive layer and a peripheral wiring region is defined in the photosensitive electrically conductive structure where the nano silver layer is covered by the photosensitive electrically conductive layer. The releasing photosensitizing resin layer has an average molecular weight (Mn) greater than 3,000 but less than 100,000, and the releasing photosensitizing resin layer, the nano silver layer, and the photosensitive electrically conductive layer are patterned. A touch sensor includes at least one layer of the photosensitive electrically conductive structure.

A core-shell nanowire, a method of forming the core-shell nanowire and a stretchable composite comprising the core-shell nanowire are provided. The core-shell nanowire comprises a core comprising a conductive metal and a shell comprising a biocompatible metal. The method of forming the core-shell nanowire comprises a step of forming a core-shell nanowire by carrying out epitaxial growth of a biocompatible metal on a surface of a core comprising a conductive metal. The stretchable composite comprises a first core-shell nanowire/polymer composite comprising first core-shell nanowires and a first polymer, a first insulating layer disposed on the first core-shell nanowire/polymer composite, and a second core-shell nanowire/polymer composite disposed on the first insulating layer and comprising second core-shell nanowires and a second polymer.

Providing a terminal material for connectors provided with a base material in which at least a surface layer is made of copper or copper alloy, a nickel-plating layer made of nickel or nickel alloy coating a surface of the base material, and a silver-nickel alloy plating layer formed on at least a part of the nickel-plating layer, the silver-nickel alloy plating layer having a film thickness of 0.5 μm to 20 μm inclusive, a nickel content of 0.03 at % to 1.20 at % inclusive, and an average crystal grain size of 10 nm to 150 nm inclusive, to improve abrasion resistance and heat resistance.

According to one embodiment, a magnetic head includes a shield, a magnetic pole, a first magnetic layer provided between the shield and the magnetic pole, a second magnetic layer provided between the first magnetic layer and the magnetic pole, a third magnetic layer provided between the second magnetic layer and the magnetic pole, a first nonmagnetic layer provided between the shield and the first magnetic layer, a second nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a third nonmagnetic layer provided between the second magnetic layer and the third magnetic layer, and a fourth nonmagnetic layer provided between the third magnetic layer and the magnetic pole. The first and third nonmagnetic layers include one of Cu, Ag, Au, Al, and Ti. The second and fourth nonmagnetic layers include one of Ta, Pt, Ir, W, Mo, Cr, Tb, Rh, Pd, and Ru.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.