B41N10/04

PRINTING BLANKET, METHOD FOR MANUFACTURING THE SAME, AND PRINTING METHOD USING THE SAME
20190134973 · 2019-05-09 · ·

There are provided a printing blanket which maintains the accuracy of printing of an image, and also prevents a failure of transfer of an ink from an original printing plate to the printing blanket, a method for manufacturing the printing blanket, and a printing method using the printing blanket. The printing blanket according to the present invention includes an elastic body which deforms in conformity to the shape of a to-be-printed surface. The elastic body includes a printing surface to be pressed against the to-be-printed surface. In the printing surface, an entire region is provided with a plurality of irregularities are formed over the entire surface of the printing surface, and an elevation difference from a highest part of the irregularities to a lowest part thereof falls within the range of 2 to 20 m.

PRINTING BLANKET, METHOD FOR MANUFACTURING THE SAME, AND PRINTING METHOD USING THE SAME
20190134973 · 2019-05-09 · ·

There are provided a printing blanket which maintains the accuracy of printing of an image, and also prevents a failure of transfer of an ink from an original printing plate to the printing blanket, a method for manufacturing the printing blanket, and a printing method using the printing blanket. The printing blanket according to the present invention includes an elastic body which deforms in conformity to the shape of a to-be-printed surface. The elastic body includes a printing surface to be pressed against the to-be-printed surface. In the printing surface, an entire region is provided with a plurality of irregularities are formed over the entire surface of the printing surface, and an elevation difference from a highest part of the irregularities to a lowest part thereof falls within the range of 2 to 20 m.

Nanowire transistor fabrication with hardmask layers

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Nanowire transistor fabrication with hardmask layers

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Method of manufacturing printing blanket
10207492 · 2019-02-19 · ·

A method of manufacturing a printing blanket without wrinkles in a sheet is provided, the printing blanket including an elastic body and a sheet bonded to a surface thereof, the method being configured to press a surface of the sheet against a surface to be printed, to perform printing, and including: fixing the sheet at a periphery of a region of the sheet to be bonded to the elastic body; mounting the elastic body to oppose a bonding surface of the elastic body to a bonding surface of the fixed sheet; applying an adhesive to at least one of the bonding surface of the sheet or the bonding surface of the elastic body; and pressing the bonding surface of the sheet and the bonding surface of the elastic body against each other to bring the sheet into close contact with the elastic body through intermediation of the adhesive while stretching the sheet along the surface of the elastic body.

RUBBER BLANKET FOR A PRINTING CYLINDER OF A PRINTING MACHINE

A rubber blanket for a printing cylinder of a printing machine, comprising at least an upper printing layer made of compact elastomeric material, at least a lower layer having a contact surface in contact with the printing cylinder, and at least one fabric reinforcement layer interposed between the upper layer and the lower layer, the lower layer being made of expanded elastomeric material.

RUBBER BLANKET FOR A PRINTING CYLINDER OF A PRINTING MACHINE

A rubber blanket for a printing cylinder of a printing machine, comprising at least an upper printing layer made of compact elastomeric material, at least a lower layer having a contact surface in contact with the printing cylinder, and at least one fabric reinforcement layer interposed between the upper layer and the lower layer, the lower layer being made of expanded elastomeric material.

NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

Blanket for printing and method for manufacturing same

The present specification provides a blanket for printing and a method for manufacturing the same.