Provided is a method for manufacturing a solar cell, including: providing a substrate having a first surface and a second surface opposite to each other forming a first doped layer on the second surface and concurrently forming a second doped layer on a target doped dielectric layer; patterning the second doped layer, including removing portions of the second doped layer; etching away the portion of the target doped dielectric layer over the first region; etching away a portion of the target doped semiconductor layer over the first region, and etching away a portion of the second doped layer over the second region; and etching away the portion of the target doped dielectric layer over the second region, a portion of the target doped semiconductor layer over the second region being reserved as a doped semiconductor portion. The respective first regions and the respective second regions are alternatingly distributed.

A solid or liquid fuel to plasma to electricity power source that provides at least one of electrical and thermal power comprising (i) at least one reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical fuel mixture comprising at least two components chosen from: a source of H.sub.2O catalyst or H.sub.2O catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of H.sub.2O catalyst or H.sub.2O catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a material to cause the fuel to be highly conductive, (iii) a fuel injection system such as a railgun shot injector, (iv) at least one set of electrodes that confine the fuel and an electrical power source that provides repetitive short bursts of low-voltage, high-current electrical energy to initiate rapid kinetics of the hydrino reaction and an energy gain due to forming hydrinos to form a brilliant-light emitting plasma, (v) a product recovery system such as at least one of an augmented plasma railgun recovery system and a gravity recovery system, (vi) a fuel pelletizer or shot maker comprising a smelter, a source or hydrogen and a source of H.sub.2O, a dripper and a water bath to form fuel pellets or shot, and an agitator to feed shot into the injector, and (vii) a power converter capable of converting the high-power light output of the cell into electricity such as a concentrated solar power device comprising a plurality of ultraviolet (UV) photoelectric cells or a plurality of photoelectric cells, and a UV window.

A solid or liquid fuel to plasma to electricity power source that provides at least one of electrical and thermal power comprising (i) at least one reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical fuel mixture comprising at least two components chosen from: a source of H.sub.2O catalyst or H.sub.2O catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of H.sub.2O catalyst or H.sub.2O catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a material to cause the fuel to be highly conductive, (iii) a fuel injection system such as a railgun shot injector, (iv) at least one set of electrodes that confine the fuel and an electrical power source that provides repetitive short bursts of low-voltage, high-current electrical energy to initiate rapid kinetics of the hydrino reaction and an energy gain due to forming hydrinos to form a brilliant-light emitting plasma, (v) a product recovery system such as at least one of an augmented plasma railgun recovery system and a gravity recovery system, (vi) a fuel pelletizer or shot maker comprising a smelter, a source or hydrogen and a source of H.sub.2O, a dripper and a water bath to form fuel pellets or shot, and an agitator to feed shot into the injector, and (vii) a power converter capable of converting the high-power light output of the cell into electricity such as a concentrated solar power device comprising a plurality of ultraviolet (UV) photoelectric cells or a plurality of photoelectric cells, and a UV window.

A solar cell device includes a supporting substrate, and an epitaxial active structure that is disposed on the supporting substrate. The epitaxial active structure has a bottom surface adjacent to the supporting substrate and a top surface opposite to the bottom surface, and is formed with an isolation section that extends from the top surface to the bottom surface. A method for producing the solar cell device is also disclosed.

Solar cell and photovoltaic module. Solar cell includes: semiconductor substrate, first passivation layer, and second passivation layer. Semiconductor substrate includes front surface and back surface opposite to each other. Back surface of semiconductor substrate has alternated N-type conductive regions and P-type conductive regions. First passivation layer is disposed on side of P-type conductive region facing away from semiconductor substrate. Length of first passivation layer along first direction is greater than length of P-type conductive region along first direction. Second passivation layer is disposed on side of N-type conductive region facing away from semiconductor substrate. Length of second passivation layer along first direction is smaller than length of N-type conductive region along first direction, first direction is parallel to plane of semiconductor substrate. Solar cell improves light utilization rate on backlight side of solar cell while reducing parasitic absorption of solar cell, thereby improving photoelectric conversion efficiency of solar cell.

Solar cell and photovoltaic module. Solar cell includes: semiconductor substrate, first passivation layer, and second passivation layer. Semiconductor substrate includes front surface and back surface opposite to each other. Back surface of semiconductor substrate has alternated N-type conductive regions and P-type conductive regions. First passivation layer is disposed on side of P-type conductive region facing away from semiconductor substrate. Length of first passivation layer along first direction is greater than length of P-type conductive region along first direction. Second passivation layer is disposed on side of N-type conductive region facing away from semiconductor substrate. Length of second passivation layer along first direction is smaller than length of N-type conductive region along first direction, first direction is parallel to plane of semiconductor substrate. Solar cell improves light utilization rate on backlight side of solar cell while reducing parasitic absorption of solar cell, thereby improving photoelectric conversion efficiency of solar cell.

Disclosed is a method of manufacturing a III-V group nanorod solar cell so that a substrate can be reused. The method may includes a first growth process of forming an etch stop layer on a substrate, a second growth process of growing a sacrificial layer on the etch stop layer, a third growth process of forming, on the sacrificial layer, a pattern layer including an opening at each location at which each nanorod solar cell is able to be grown, a fourth growth process of growing the nanorod solar cells on the sacrificial layer through the openings within the pattern layer, a forming process of forming a solar cell protection layer on outsides of the nanorod solar cells, a first etching process of etching the sacrificial layer and the pattern layer, and a second etching process of etching the etch stop layer.

A stacked monolithic upright metamorphic multijunction solar cell, comprising at least one first subcell having a first band gap, a first lattice constant and being made up of germanium by more than 50%, a second subcell, which is disposed above the first subcell and has a second band gap and a second lattice constant, a metamorphic buffer disposed between the first subcell and the second subcell, including a sequence of at least three layers having lattice constants which increase from layer to layer in the direction of the second subcell, and a first tunnel diode, which is situated between the metamorphic buffer and the second subcell and which has an n.sup.+ layer and a p.sup.+ layer, the second band gap being larger than the first band gap, the n.sup.+ layer of the first tunnel diode comprising InAlP, the p.sup.+ layer of the first tunnel diode comprising an As-containing III-V material.

A stacked monolithic upright metamorphic multijunction solar cell, comprising at least one first subcell having a first band gap, a first lattice constant and being made up of germanium by more than 50%, a second subcell, which is disposed above the first subcell and has a second band gap and a second lattice constant, a metamorphic buffer disposed between the first subcell and the second subcell, including a sequence of at least three layers having lattice constants which increase from layer to layer in the direction of the second subcell, and a first tunnel diode, which is situated between the metamorphic buffer and the second subcell and which has an n.sup.+ layer and a p.sup.+ layer, the second band gap being larger than the first band gap, the n.sup.+ layer of the first tunnel diode comprising InAlP, the p.sup.+ layer of the first tunnel diode comprising an As-containing III-V material.

Systems to induce current flow in a circuit formed by intersecting molten metal streams are provided. The systems involve induction type electromagnetic pumps that produce each molten metal stream. In some embodiments, the current induced through the molten metal streams is induction current.