A light receiving device that includes a lens that collects a spatial light signal, a sensor array including a plurality of light receivers that receives the spatial light signal collected by the lens, and a reception unit that integrates an electric signal derived from the spatial light signal received by each of the plurality of light receivers and selects a light receiver that receives the spatial light signal. according to a voltage value of the integrated electric signal.

A photodetection element comprises a substrate having a first surface and a second surface opposite to each other, a first node region within the substrate and having a first conductivity type, a second node region within the substrate spaced apart from the first node region and having a second conductivity type different from the first conductivity type, and an avalanche multiplication region formed between the first node region and the second node region. The first node region, the avalanche multiplication region, and the second node region are arranged along a first direction parallel to the first surface.

Processes and devices for continuous compositional grading in photodetectors and electro-absorption modulators (EAM) are provided. An example photodetector includes a multi-layered structure comprising a collector region, an absorber region, a grading layer, and a peripheral layer, all aligned along a detection axis. The grading layer, positioned adjacent to the absorber region, includes multiple sub-layers that define a continuous compositional grading to facilitate smooth carrier transport and reduce recombination. Similarly, an example electro-absorption modulator (EAM) device includes a waveguide mesa formed on a semiconductor substrate, comprising a multi-quantum well (MQW) core layer, upper and lower near-core cladding layers, and upper and lower central cladding layers. The EAM device features both upper and lower grading layers, each positioned between the near-core cladding layers and the adjacent central cladding layers. These grading layers include multiple sub-layers that define a continuous compositional grading, facilitating smooth transitions between the MQW core and surrounding cladding layers.

The disclosure provides a photoelectric detector. The photoelectric detector includes a waveguide layer, an absorption layer, and a cladding material. The absorption layer is located on an upper surface of the waveguide layer or at least partially embedded in the waveguide layer. The cladding material covers top portions and side walls of the waveguide layer and the absorption layer. At least one end surface of the photoelectric detector is a light incident surface, and a thickness of an end surface of the absorption layer adjacent to the light incident surface is smaller than a thickness of other portions.

A photodetector, comprising a flat slab structure (1), a waveguide structure (6), a light trapping structure (2), an absorption structure (3), a first electrode structure (4) and a second electrode structure (5), wherein the waveguide structure (6) extends into the light trapping structure (2), and a first edge where a first side wall of the waveguide structure (6) is located is tangent to a second edge where a second side wall in outer side walls of the light trapping structure (2) is located; the waveguide structure (6) is used for guiding incident light into the light trapping structure (2) in a direction tangent to the second edge; the guided light is trapped in the light trapping structure (2) by means of total internal reflection of the side walls of the light trapping structure (2) for annular transmission, and the guided light is coupled into the absorption structure (3) by means of the light trapping structure (2); the first electrode structure (4) is located in the light trapping structure (2); the first electrode structure (4) and the second electrode structure (5) are used for collecting electrons or holes transmitted along the absorption structure (3) and the light trapping structure (2); the types of current carriers collected by the first electrode structure (4) and the second electrode structure (5) are different.

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes include a photon-reflective material.

A backside illuminated image sensor includes a semiconductor material with a plurality of photodiodes disposed in the semiconductor material, and a transfer gate electrically coupled to a photodiode in the plurality of photodiodes to extract image charge from the photodiode. The image sensor also includes a storage gate electrically coupled to the transfer gate to receive the image charge from the transfer gate. The storage gate has a gate electrode disposed proximate to a frontside of the semiconductor material, an optical shield disposed in the semiconductor material, and a storage node disposed between the gate electrode and the optical shield. The optical shield is optically aligned with the storage node to prevent the image light incident on the backside illuminated image sensor from reaching the storage node.

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In one structure, a first trench isolation region is in and at the top surface of a substrate and a second trench isolation region is in the substrate below the first. A photodetector is on the substrate aligned above the first and second trench isolation regions. In another structure, a semiconductor layer is on an insulator layer and laterally surrounded by a first trench isolation region. A second trench isolation region is in and at the top surface of a substrate below the insulator layer and first trench isolation region. A photodetector is on the semiconductor layer and extends laterally onto the first trench isolation region. The stacked trench isolation regions provide sufficient isolation below the photodetector to allow for direct coupling with an off-chip optical fiber.